Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Kaestner, B."'
Autor:
Hornemann, A., Marschall, M., Metzner, S., Patoka, P., Cortes, S., Wübbeler, G., Hoehl, A., Rühl, E., Kästner, B., Elster, C.
Infrared hyperspectral imaging is a powerful approach in the field of materials and life sciences. However, the extension to modern sub-diffraction nanoimaging still remains a highly inefficient technique, as it acquires data via inherent sequential
Externí odkaz:
http://arxiv.org/abs/2205.02748
Autor:
Pfitzner, E., Hu, X., Schumacher, H. W., Hoehl, A., Venkateshvaran, D., Cubukcu, M., Liao, J. -W., Auffret, S., Heberle, J., Wunderlich, J., Kaestner, B.
Publikováno v:
AIP Advances 8, 125329 (2018)
Near-field optical microscopy by means of infrared photocurrent mapping has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exp
Externí odkaz:
http://arxiv.org/abs/1808.10767
Publikováno v:
Phys. Rev. Lett. 115, 106801 (2015)
Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocki
Externí odkaz:
http://arxiv.org/abs/1503.04131
Autor:
Mirovsky, P., Fricke, L., Hohls, F., Kaestner, B., Leicht, Ch., Pierz, K., Melcher, J., Schumacher, H. W.
Publikováno v:
J. Appl. Phys. 113, 213704 (2013)
The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge o
Externí odkaz:
http://arxiv.org/abs/1303.5565
Autor:
Mirovsky, P., Kaestner, B., Leicht, C., Welker, A. C., Weimann, T., Pierz, K., Schumacher, H. W.
Publikováno v:
Appl. Phys. Lett. 97, 252104 (2010)
We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating th
Externí odkaz:
http://arxiv.org/abs/1011.2705
Autor:
Leicht, C., Mirovsky, P., Kaestner, B., Hohls, F., Kashcheyevs, V., Kurganova, E. V., Zeitler, U., Weimann, T., Pierz, K., Schumacher, H. W.
Publikováno v:
Semicond. Sci. Technol. 26, 055010 (2011)
We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron g
Externí odkaz:
http://arxiv.org/abs/1009.5897
Autor:
Kaestner, B., Leicht, C., Mirovsky, P., Kashcheyevs, V., Kurganova, E. V., Zeitler, U., Pierz, K., Schumacher, H. W.
Publikováno v:
AIP Conf. Proc. 1399, 345 (2010)
We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to
Externí odkaz:
http://arxiv.org/abs/1007.2062
Autor:
Wunderlich, J., Irvine, A. C., Sinova, Jairo, Park, B. G., Xu, X. L., Kaestner, B., Novak, V., Jungwirth, T.
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they p
Externí odkaz:
http://arxiv.org/abs/0811.3486
Publikováno v:
Appl. Phys. Lett. 94, 012106 (2009)
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates
Externí odkaz:
http://arxiv.org/abs/0811.1121
Publikováno v:
Appl. Phys. Lett. 92, 192106 (2008)
This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving si
Externí odkaz:
http://arxiv.org/abs/0803.0869