Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kaeppeler, Johannes"'
Autor:
Boyd, Adam R., Degroote, Stefan, Leys, Maarten, Schulte, Frank, Rockenfeller, Olaf, Luenenbuerger, Markus, Germain, Marianne, Kaeppeler, Johannes, Heuken, Michael
Publikováno v:
Physica Status Solidi (C); Jun2009 Supplement, Vol. 6, pS1045-S1048, 4p
The invention relates to a device and method for the deposition of, in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber (1), by means of reaction gases which are fed to the process c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=epopatstat__::6fc313bd299a983dcbaddffc6c1b678b
https://register.epo.org/application?number=EP0108105
https://register.epo.org/application?number=EP0108105
The invention relates to a method for depositing III-V semiconductor layers that also contain nitrogen, especially for depositing II-IV compounds, oxides, especially metal oxides. According to the invention, the front face of the gas inlet element an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=epopatstat__::1fd127fbef01a6950d61350b5b4b4623
https://register.epo.org/application?number=EP0210871
https://register.epo.org/application?number=EP0210871