Zobrazeno 1 - 10
of 558
pro vyhledávání: '"Kaenel, H"'
Autor:
Drichko, I. L., Dmitriev, A. A., Malysh, V. A., Smirnov, I. Yu., Galperin, Yu. M., von Känel, H., Kummer, M., Isella, G., Chrastina, D.
Publikováno v:
JETP 126, 246 (2018)
The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi st
Externí odkaz:
http://arxiv.org/abs/1812.04870
Autor:
Drichko, I. L., Dmitriev, A. A., Malysh, V. A., Smirnov, I. Yu., von Känel, H., Kummer, M., Chrastina, D., Isella, G.
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular mag
Externí odkaz:
http://arxiv.org/abs/1804.03876
Autor:
Drichko, I. L., Malysh, V. A., Smirnov, I. Yu., Golub, L. E., Tarasenko, S. A., Suslov, A. V., Mironov, O. A., Kummer, M., von Känel, H.
Publikováno v:
Phys. Rev. B 90, 125436 (2014)
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85
Externí odkaz:
http://arxiv.org/abs/1411.3522
Autor:
Drichko, I. L., Diakonov, A. M., Malysh, V. A., Smirnov, I. Yu., Galperin, Y. M., Ilyinskaya, N. D., Usikova, A. A., Kummer, M., von Känel, H.
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscop
Externí odkaz:
http://arxiv.org/abs/1407.2834
Autor:
Drichko, I. L., Malysh, V. A., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A., Kummer, M., von Känel, H.
Publikováno v:
JAP 114, 074302 (2013)
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-
Externí odkaz:
http://arxiv.org/abs/1312.3064
Autor:
Pezzoli, F., Isa, F., Isella, G., Falub, C. V., Kreiliger, T., Salvalaglio, M., Bergamaschini, R., Grilli, E., Guzzi, M., von Kaenel, H., Miglio, Leo
Publikováno v:
Phys. Rev. Applied 1, 044005 (2014)
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to extend Si funct
Externí odkaz:
http://arxiv.org/abs/1306.5270
Autor:
Drichko, I. L., Diakonov, A. M., Lebedeva, E. V., Smirnov, I. Yu., Mironov, O. A., Kummer, M., von Känel, H.
Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the
Externí odkaz:
http://arxiv.org/abs/0906.2653
Autor:
Stoffel, M., Malachias, A., Merdzhanova, T., Cavallo, F., Isella, G., Chrastina, D., von Kaenel, H., Rastelli, A., Schmidt, O. G.
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state
Externí odkaz:
http://arxiv.org/abs/0801.4211
Autor:
Costantini, G., Rastelli, A., Manzano, C., Songmuang, R., Schmidt, O. G., Kaenel, H. v., Kern, K.
The model systems for self-organized quantum dots formed from elemental and compound semiconductors, namely Ge grown on Si(001) and InAs on GaAs(001), are comparatively studied by scanning tunneling microscopy. It is shown that in both material combi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0406380
The morphology of the first three-dimensional islands appearing during strained growth of SiGe alloys on Si(001) was investigated by scanning tunneling microscopy. High resolution images of individual islands and a statistical analysis of island shap
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306491