Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Kae Dal Kwack"'
Publikováno v:
Sensors, Vol 11, Iss 2, Pp 1321-1327 (2011)
A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of
Externí odkaz:
https://doaj.org/article/47a3e3b2fa7242638da53e0417d4557e
Publikováno v:
Sensors, Vol 8, Iss 10, Pp 6225-6234 (2008)
Changes in electric parameters of a mesoporous silicon treated by a plasma chemical etching with fluorine and hydrogen ions, under the adsorption of NEPO (Nematodetransmitted Polyhedral) plant viruses such as TORSV (Tomato Ringspot Virus), GFLV (Grap
Externí odkaz:
https://doaj.org/article/54e379e6557844b9ad6fd3525612d32d
Autor:
Yuriy Vashpanov, Kae Dal Kwack
A method of using photo-electromotive forces on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of polar gases at room temperature in the measurement chamber is proposed. The porous sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c61e91adc5a9bff222538235c3b9ae
https://doi.org/10.9734/bpi/rtcps/v4/11989d
https://doi.org/10.9734/bpi/rtcps/v4/11989d
Publikováno v:
International Journal of Advanced Robotics and Automation. 3:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ae53d6bf9f2bf8bf8764c32d62268f1
https://doi.org/10.15226/2473-3032/3/2/00134
https://doi.org/10.15226/2473-3032/3/2/00134
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 715:012094
This report presents experimental studies of electrical changes in photovoltaic sensitive elements based on a Por-Si: c-Si heterojunction during the adsorption of acetone molecules in a mixture of pure nitrogen. The porous silicon layer was formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff3d9ff10681dc6d14189d1a172ce3f0
https://doi.org/10.1088/1757-899x/715/1/012094
https://doi.org/10.1088/1757-899x/715/1/012094
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:6109-6113
Nanoscale two-bit/cell NAND-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices with different tunneling oxide thicknesses were designed to reduce the short channel effect and the coupling interference. The process step and the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::febbf35bd2296787a671e19b219e54e7
https://doi.org/10.1166/jnn.2011.4468
https://doi.org/10.1166/jnn.2011.4468
Publikováno v:
physica status solidi (a). 208:1683-1687
Earlier we reported on a tunnel charge transport mechanism in mesoporous silicon with columnar structures under adsorption of plant nematode-transmitted polyhedral (NEPO) viruses at room temperature. Additional experiments are performed in this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5545d58c4e16cfdf90cc756d61270d
https://doi.org/10.1002/pssa.201026662
https://doi.org/10.1002/pssa.201026662
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:1337-1341
Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::676a89d1687dbc753b2d916683ed297b
https://doi.org/10.1166/jnn.2011.3373
https://doi.org/10.1166/jnn.2011.3373
Publikováno v:
Journal of Alloys and Compounds. 509:2176-2179
Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d1aeef39517326f9b225e31e06a712c
https://doi.org/10.1016/j.jallcom.2010.10.180
https://doi.org/10.1016/j.jallcom.2010.10.180
Publikováno v:
IEICE Transactions on Electronics. :654-657
The multilevel dual-channel (MLDC) not-AND (NAND) flash memories cell structures with asymmetrically-doped channel regions between the source and the drain were proposed to enhance read and program verifying speeds. The channel structure of the MLDC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75916781caf84008cda92a7aed60cd0
https://doi.org/10.1587/transele.e93.c.654
https://doi.org/10.1587/transele.e93.c.654