Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kadiyam Rajshekar"'
Autor:
Kadiyam Rajshekar, D. Kannadassan
Publikováno v:
IEEE Access, Vol 9, Pp 158842-158851 (2021)
In this paper, we present the physical modeling and numerical simulations of p-type Cu2O TFT for the design and development of active matrix displays. In Cu2O, the carrier transport is through copper and oxygen vacancies ( $V_{Cu}$ and $V_{O}$ ) whic
Externí odkaz:
https://doaj.org/article/a7f5a9331c3e4e5da8826d9f1e2a7d05
Autor:
Kadiyam Rajshekar, Hsiao-Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun-Hu Cheng, D. Kannadassan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 948-958 (2020)
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active laye
Externí odkaz:
https://doaj.org/article/a44958fdba044daa93dfe9c6a125253c
Autor:
Chun-Hu Cheng, Hsiao-Hsuan Hsu, V. Velmurugan, Koppolu Uma Mahendra Kumar, D. Kannadassan, P. Sathyanarayanan, Kadiyam Rajshekar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 948-958 (2020)
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7448f85550575208d81447798d2db0e5
https://doi.org/10.1109/jeds.2020.3018463
https://doi.org/10.1109/jeds.2020.3018463
Autor:
Chun-Hu Cheng, P. Sathyanarayanan, V. Velmurugan, Kadiyam Rajshekar, Koppolu Uma Mahendra Kumar, D. Kannadassan, Hsiao-Hsuan Hsu
Publikováno v:
IEEE Transactions on Electron Devices. 66:1314-1321
With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e851010c97a358bb62410b0b838a44d7
https://doi.org/10.1109/ted.2019.2895042
https://doi.org/10.1109/ted.2019.2895042
In this paper, a comprehensive Density of States model was proposed to understand the origin of conductivity and the performance of p-type and n-type oxide semiconductor thin film transistors (TFTs). To validate the model, the simulated I-V character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad1a57ee83ec862a0b5fd8236b0c69c
https://doi.org/10.21203/rs.3.rs-236642/v1
https://doi.org/10.21203/rs.3.rs-236642/v1
Autor:
Maryam Shojaei Baghini, Kadiyam Rajshekar, Partha Sharathi Mallick, Dudekula Shaikshavali, D. Kannadassan, Aparna Sanal
Publikováno v:
Advanced Science Letters. 24:6008-6012
In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer Metal-Insulator-Metal (MIM) capacitors. The model was verified with measured capacitance–voltage characteristics of fabricated bila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe311c282bc4914fbe38aee4bda84817
https://doi.org/10.1166/asl.2018.12236
https://doi.org/10.1166/asl.2018.12236