Zobrazeno 1 - 10 of 32 pro vyhledávání: '"Kaddour Lekhal"'
1
Reconfiguration of Amorphous Complex Oxides: A Route to a Broad Range of Assembly Phenomena, Hybrid Materials, and Novel Functionalities
Autor: Donald E. Savage, Divya J. Prakash, Christoph Deneke, Chaiyapat Tangpatjaroen, Kaddour Lekhal, Francesca Cavallo, Angelo Malachias, Paul G. Evans, Omar Elleuch, Izabela Szlufarska, Mengistie L. Debasu, Yajin Chen, Adam D. Alfieri
Publikováno v: Small (Weinheim an der Bergstrasse, Germany). 18(1)
Reconfiguration of amorphous complex oxides provides a readily controllable source of stress that can be leveraged in nanoscale assembly to access a broad range of 3D geometries and hybrid materials. An amorphous SrTiO3 layer on a Si:B/Si1-x Gex :B h
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a218b915ac26f4027a3a85af57fee68
https://pubmed.ncbi.nlm.nih.gov/34786844
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2
Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
Autor: Bernard Gil, Benjamin Damilano, Kaddour Lekhal, Thi Huong Ngo, Pierre Ruterana, Magali Morales, Nicolas Chery, M. P. Chauvat
Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2020, 128, pp.223102. ⟨10.1063/5.0027119⟩
Journal of Applied Physics, 2020, 128, pp.223102. ⟨10.1063/5.0027119⟩
International audience; In this work, InGaN/GaN Multi-Quantum Wells (MQWs) with strain compensating AlGaN interlayers grown by metalorganic vapour phase epitaxy have been investigated by high resolution X-ray diffraction, transmission electron micros
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::015c430fab55959147aedebb09ba90bd
https://hal.archives-ouvertes.fr/hal-03047502
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3
Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
Autor: Takafumi Suzuki, Si-Young Bae, Maki Kushimoto, Yoshio Honda, Kaddour Lekhal, Ho-Jun Lee, Akira Tamura, Hiroshi Amano
Publikováno v: Journal of Crystal Growth. 468:547-551
We successfully grew semipolar ( 10 1 3 ) and ( 10 1 5 ) GaN films on Si(001) substrates employing metal-organic chemical vapor deposition (MOCVD) by inserting a directionally sputtered AlN (DS-AlN) buffer layer. To improve the crystal quality of the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3bc1bce4bd9c52c6e7e13db7145c4834
https://doi.org/10.1016/j.jcrysgro.2016.11.116
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4
Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
Autor: Hiroshi Amano, Kaddour Lekhal, Yoshio Honda, Ho-Jun Lee, Si-Young Bae, Maki Kushimoto, Jung-Wook Min, Dong-Seon Lee, Tadashi Mitsunari
Publikováno v: Journal of Crystal Growth. 468:110-113
Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL) for growing GaN nanostruc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f50c795398d8cec364da5dedcaa27fb1
https://doi.org/10.1016/j.jcrysgro.2016.10.032
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5
Effect of V/III ratio on the surface morphology and electrical properties of m–plane (101¯0) GaN homoepitaxial layers
Autor: Atsushi Tanaka, Si-Young Bae, Yoshio Honda, Kentaro Nagamatsu, Kaddour Lekhal, Shugo Nitta, Hiroshi Amano, Ousmane Barry, Manato Deki, Junya Matsushita
Publikováno v: Journal of Crystal Growth. 468:552-556
We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m –plane ( 10 1 ¯ 0 ) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nomin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3290abb9c15c5294e5b9fb5b74c59630
https://doi.org/10.1016/j.jcrysgro.2016.12.012
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6
Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition
Autor: Byung Oh Jung, Manato Deki, Si-Young Bae, Kaddour Lekhal, Yoshio Honda, Dong-Seon Lee, Jeong Yong Lee, Hiroshi Amano, Sang Yun Kim
Publikováno v: CrystEngComm. 18:1505-1514
To extend the availability of nanostructure-based optoelectronic applications, vertically elongated nanorods with precisely controlled morphology are required. For group III nitrides, pulsed-mode growth has recently been reported as an effective meth
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3506ebac8876095dd8b18955ac92b9da
https://doi.org/10.1039/c5ce02056e
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7
III-nitride core–shell nanorod array on quartz substrates
Autor: Yong Tak Lee, Dong-Seon Lee, Yoshio Honda, Hyeong-Yong Hwang, Kaddour Lekhal, Jung-Wook Min, Nobuyuki Ikarashi, Young-Dahl Jho, Hiroshi Amano, Ho-Jun Lee, Si-Young Bae
Publikováno v: Scientific Reports
We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical v
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::668e3aaa99da6a6d367d54348a65e4a9
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8
Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction
Autor: Benjamin Damilano, Kaddour Lekhal, Bernard Gil, Philippe De Mierry, Thi Huong Ngo
Publikováno v: Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2017, 103, pp.245. ⟨10.1016/j.spmi.2017.01.026⟩
International audience; We comparatively study the onset of photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaNsingle bondGaN hetero-structures grown along the polar orientation. We find
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cabb96f72f266ec1687543c2cc323eb
https://hal.archives-ouvertes.fr/hal-01490590
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9
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Autor: Guillaume Monier, Geoffrey Avit, Kaddour Lekhal, Yamina André, Dominique Castelluci, Joël Leymarie, Evelyne Gil, François Réveret, Agnès Trassoudaine, Catherine Bougerol
Publikováno v: Nano Letters
Nano Letters, 2014, 14 (2), pp.559. ⟨10.1021/nl403687h⟩
Nano Letters, American Chemical Society, 2014, 14 (2), pp.559. ⟨10.1021/nl403687h⟩
International audience; GaN nanowires with exceptional lengths are synthesized by vapor-liquid-solid coupled with near-equilibrium hydride vapor phase epitaxy technique on c-plane sapphire substrates. Because of the high decomposition frequency of Ga
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cf4c9cf9d824053202853b7d389073a
https://doi.org/10.1021/nl403687h
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10
Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
Autor: Benjamin Damilano, Bernard Gil, Kaddour Lekhal, Pierre Valvin, Thi Huong Ngo, Philippe De Mierry
Publikováno v: Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2016, 55, pp.05FG10. ⟨10.7567/JJAP.55.05FG10⟩
The Auger effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence inte
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b7934f14d63f7844f3926d2faf94dae
https://hal.archives-ouvertes.fr/hal-01382420
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