Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Kacper Sierakowski"'
Autor:
Emi Kano, Ritsuo Otsuki, Koki Kobayashi, Keita Kataoka, Kacper Sierakowski, Michal Bockowski, Masahiro Nagao, Tetsuo Narita, Tetsu Kachi, Nobuyuki Ikarashi
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters.
Autor:
Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Shane R. Stein, Dolar Khachariya, Seiji Mita, M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Kacper Sierakowski, Grzegorz Kamler, Michał Boćkowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Publikováno v:
Applied Physics Express. 16:031006
We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low recti
Autor:
Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, Michal Bockowski
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Masahiro Horita, Nobuyuki Ikarashi, Kacper Sierakowski, Michal Bockowski, Jun Suda
Publikováno v:
Journal of Applied Physics. 132:130901
P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to improve the performance of vertical GaN power devices. UHPA allows a high-temperatu
Autor:
Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi
Publikováno v:
physica status solidi (b). 259:2270028
Autor:
Dolar Khachariya, Shane Stein, Will Mecouch, M. Hayden Breckenridge, Shashwat Rathkanthiwar, Seiji Mita, Baxter Moody, Pramod Reddy, James Tweedie, Ronny Kirste, Kacper Sierakowski, Grzegorz Kamler, Michal Bockowski, Erhard Kohn, Spyridon Pavlidis, Ramón Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Express. 15:101004
We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS
Autor:
Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, Nobuyuki Ikarashi
Publikováno v:
Journal of Applied Physics. 132:065703
We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic structures of extended defects and Mg agglomerations that form during post-impl
Autor:
Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono
Publikováno v:
Journal of Applied Physics. 131:185701
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; however, conventional annealing leads to the formation of numerous Mg-enriched defects, which result in inefficie
Autor:
Kacper Sierakowski, Rafal Jakiela, Piotr Jaroszynski, Pawel Kempisty, Michal Bockowski, M. Fijalkowski, Marcin Turek
Publikováno v:
Gallium Nitride Materials and Devices XVI.
Diffusion of Be was investigated for the main crystallographic directions in HVPE-GaN: c [0001], m [10-10], and a [11-20]. Be was implanted into the samples at room temperature with a dose of 2.9e15 cm-2 with energy of 200 keV. Ultra-high pressure an