Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kabir, Nafees A."'
Autor:
W. Rachmady, Phan Anh, G. Dewey, P. Nguyen, Matthew V. Metz, Tung I-Cheng, Patrick Morrow, Rajat Kanti Paul, Scott B. Clendenning, Nicole K. Thomas, A. A. Oni, Ryan Keech, Marko Radosavljevic, Huang Cheng-Ying, Alaan Urusa, Manan Mehta, Kang Jun Sung, A. Lilak, Mannebach Ehren, Hui Jae Yoo, Bob Turkot, Kabir Nafees, S. Vishwanath, K. L. Cheong, Richard E. Schenker, B. Krist, Michael K. Harper, Jack Portland Kavalieros
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate 3-D self-aligned stacked NMOS-on-PMOS multiple Si nanoribbon transistors with successful integration of vertically stacked dual source/drain EPI process and vertically stacked dual metal gate process. Both top NMOS and bottom PMOS show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2fecb4c1020f6a74997a8120152a6c
https://doi.org/10.1109/iedm13553.2020.9372066
https://doi.org/10.1109/iedm13553.2020.9372066
Autor:
John J. Plombon, Hui Jae Yoo, Narendra Lakamraju, Colin T. Carver, B. Krist, Rahim Kasim, Kanwal Jit Singh, Tejaswi K. Indukuri, Jasmeet S. Chawla, Kevin L. Lin, James S. Clarke, Mauro J. Kobrinsky, J. Bielefeld, Hazel Lang, Kabir Nafees, M. Harmes, Jessica M. Torres, E. Mays, Jacob Faber, Christopher J. Jezewski, Alan Myers, Ramanan V. Chebiam
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal thin-film barriers. Etch stop planar capacitors in turn can test multi-layer etch stops, exposin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47dcd35f8378b2ae8fafb82d3251683
https://doi.org/10.1109/iitc-mam.2015.7325646
https://doi.org/10.1109/iitc-mam.2015.7325646
Autor:
Kabir, Nafees Aminul.
Thesis (Ph.D.)--State University of New York at Buffalo, 2007.
Title from PDF title page (viewed on Feb. 21, 2008) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Bird, Jonathan P., Markelz, Andrea G. Includes bibliographic
Title from PDF title page (viewed on Feb. 21, 2008) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Bird, Jonathan P., Markelz, Andrea G. Includes bibliographic
Externí odkaz:
http://proquest.umi.com/pqdweb?did=1397913361&sid=5&Fmt=2&clientId=39334&RQT=309&VName=PQD
Autor:
Lin, Kevin L., Bielefeld, Jeffrey, Chawla, Jasmeet S., Carver, Colin T., Chebiam, Ramanan, Clarke, James S., Faber, Jacob, Harmes, Michael, Indukuri, Tejaswi, Jezewski, Christopher, Kasim, Rahim, Kobrinsky, Mauro, Kabir, Nafees A., Krist, Brian, Lakamraju, Narendra, Lang, Hazel, Mays, Ebony, Myers, Alan M., Plombon, John J., Singh, Kanwal Jit
Publikováno v:
2015 IEEE International Interconnect Technology Conference & 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM); 2015, p139-142, 4p