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Autor:
Feil, Maximilian W., Weger, Magdalena, Reisinger, Hans, Aichinger, Thomas, Kabakow, André, Waldhör, Dominic, Jakowetz, Andreas C., Prigann, Sven, Pobegen, Gregor, Gustin, Wolfgang, Waltl, Michael, Bockstedte, Michel, Grasser, Tibor
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted recombinati
Externí odkaz:
http://arxiv.org/abs/2404.13463
Publikováno v:
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p929-932, 4p
