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pro vyhledávání: '"Kaat Van Dongen"'
Autor:
Rachel A. Nye, Kaat Van Dongen, Jean‐François deMarneffe, Gregory N. Parsons, Annelies Delabie
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 20, Pp n/a-n/a (2023)
Abstract Area‐selective deposition (ASD) shows great promise for sub‐10 nm manufacturing in nanoelectronics, but significant challenges remain in scaling to ultrasmall dimensions and understanding feature‐dependent nonuniformity and selectivity
Externí odkaz:
https://doaj.org/article/9af9aa0c301c4258b0dc3b0eecf43c17
Autor:
Rachel A. Nye, Kaat Van Dongen, Danilo De Simone, Hironori Oka, Gregory N. Parsons, Annelies Delabie
Publikováno v:
Chemistry of Materials. 35:2016-2026
Autor:
Rachel Nye, Kaat Van Dongen, Hironori Oka, Hajime Furutani, Gregory Parsons, Danilo De Simone, Annelies Delabie
Publikováno v:
Advances in Patterning Materials and Processes XXXIX.
ispartof: ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXIX vol:12055 ispartof: Conference on Advances in Patterning Materials and Processes XXXIX Part of SPIE Advanced Lithography and Patterning Conference location:ELECTR NETWORK date:24 Apr - 27
Publikováno v:
Applied Physics Letters. 121:082102
During TiO2 atomic layer deposition (ALD) using TiCl4 and H2O at ∼150 °C, nucleation proceeds rapidly on hydroxylated SiO2 but is inherently delayed on passivated surfaces such as H-terminated silicon (Si-H) and trimethylsilyl-passivated SiO2 (SiO
Autor:
Kaat Van Dongen, Fabio Grillo, Esteban A. Marques, J.R. van Ommen, Lilian de Martín, Annelies Delabie, Job Soethoudt
Publikováno v:
Chemistry of Materials, 32 (22)
Chemistry of Materials, 32(22)
Chemistry of Materials, 32(22)
Area-selective deposition (ASD) enables the growth of materials on target regions of patterned substrates for applications in fields ranging from microelectronics to catalysis. Selectivity is often achieved through surface modifications aimed at supp