Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Kaan Oguz"'
Autor:
Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova
Publikováno v:
Nano Letters
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f21660abea7f672c54dfa936ce50880
http://arxiv.org/abs/2210.09792
http://arxiv.org/abs/2210.09792
Autor:
Won Young, Choi, Isabel C, Arango, Van Tuong, Pham, Diogo C, Vaz, Haozhe, Yang, Inge, Groen, Chia-Ching, Lin, Emily S, Kabir, Kaan, Oguz, Punyashloka, Debashis, John J, Plombon, Hai, Li, Dmitri E, Nikonov, Andrey, Chuvilin, Luis E, Hueso, Ian A, Young, Fèlix, Casanova
Publikováno v:
Nano letters. 22(19)
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::67eba0d9b5464443ce76e3bb6692faf5
https://pubmed.ncbi.nlm.nih.gov/36162104
https://pubmed.ncbi.nlm.nih.gov/36162104
Autor:
Haoran He, Lixuan Tai, Hao Wu, Di Wu, Armin Razavi, Tanay A. Gosavi, Emily S. Walker, Kaan Oguz, Chia-Ching Lin, Kin Wong, Yuxiang Liu, Bingqian Dai, Kang L. Wang
Publikováno v:
Physical Review B. 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e712be1cea0eea096fb2bb4c429a185f
https://doi.org/10.1103/physrevb.104.l220407
https://doi.org/10.1103/physrevb.104.l220407
Autor:
Buford Benjamin, Mahendra Dc, Huichu Liu, Jian-Ping Wang, Van Tuong Pham, Ramamoorthy Ramesh, Inge Groen, Won Young Choi, Jun-Yang Chen, Bhagwati Prasad, Kaan Oguz, Yen Lin Huang, Emily S. Walker, Fèlix Casanova, Gosavi Tanay, Dmitri E. Nikonov, Ian A. Young, John J. Plombon, Carl H. Naylor, Lin Chia-Ching
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
600 mV magneto-electric switching in 30 nm La-doped BiFeO 3 multiferroic oxide and a proof of concept 7 μV spin-orbit signal output in Pt / CoFe local spin injection device with 100 μA supply current were experimentally demonstrated at room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::447ab37efbd8a7183fdda3cb80d02973
https://doi.org/10.1109/iedm19573.2019.8993620
https://doi.org/10.1109/iedm19573.2019.8993620
Autor:
Mesut Meterelliyoz, Tahir Ghani, Kevin J. Fischer, O'brien Kevin P, Pellegren James, Dmitri E. Nikonov, J.O Donnell, Chris Connor, Nilanjan Das, P. Nguyen, Smith Andrew, Buford Benjamin, Pedro A. Quintero, P. Hentges, Justin S. Brockman, M. Seth, M. Mainuddin, Philip E. Heil, Smith Angeline K, Brian S. Doyle, Rownak Jahan, Z. Zhang, David L. Kencke, M. Bohr, Liqiong Wei, P. Bai, Tofizur Rahman, M. Lu, Blake C. Lin, M. Sekhar, Conor P. Puls, Kaan Oguz, Joodong Park, A. Selarka, A. Romang, Oleg Golonzka, Christopher J. Wiegand, Juan G. Alzate, Ouellette Daniel G, Umut Arslan, Fatih Hamzaoglu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ba36237ea81a7d30a38bf6d3d89035
https://doi.org/10.1109/iedm.2018.8614620
https://doi.org/10.1109/iedm.2018.8614620
Publikováno v:
Journal of Magnetism and Magnetic Materials. 322:1413-1415
Differential resistance data is gathered on both as-deposited and annealed tunnel junctions based on CoFeB/MgO interfaces, where one of the layers is pinned via exchange bias. When sufficiently strong magnetic field is rotated out of the plane of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0219947cf4a3d7265d538b3ca1791de4
https://doi.org/10.1016/j.jmmm.2009.09.042
https://doi.org/10.1016/j.jmmm.2009.09.042
Autor:
J. M. D. Coey, Kaan Oguz
Publikováno v:
Journal of Magnetism and Magnetic Materials. 321:1009-1011
A series of Co40Fe40B20/SrTiO3/Co40Fe40B20 magnetic tunnel junctions with a bottom-pinned synthetic antiferromagnet have been prepared by sputtering. Devices optimally annealed at 325 °C exhibit an exchange bias of about 65 mT, and a tunnel magnetor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5791eec11e8a6322750c5968461da2
https://doi.org/10.1016/j.jmmm.2008.04.153
https://doi.org/10.1016/j.jmmm.2008.04.153
Publikováno v:
The European Physical Journal B. 86
The demagnetizing field of a Co50Fe50 free layer in an in-plane micron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchange coupling with a [Co90Fe10/Pt] N multilayer with perpendicular magnetic anisotropy via a Ru interlayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b91e4b175be8caa27556d1204f11cc4
https://doi.org/10.1140/epjb/e2013-30680-8
https://doi.org/10.1140/epjb/e2013-30680-8
In this study, the polypropylene-zeolite composite films having 2-6 wt % natural zeolite were coated with a thin film of aluminum (Al) by magnetron sputtering, and the contribution of the Al coating on film properties was investigated. The samples we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa4b6ee8b63c270e4af39875625d6743
http://hdl.handle.net/11147/5076
http://hdl.handle.net/11147/5076
PUBLISHED
MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at
MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e545f79815a7647f333383d944c5c201