Zobrazeno 1 - 6
of 6
pro vyhledávání: '"KUTALOVA, M. I."'
Publikováno v:
Photoelectronics; № 27 (2018): Photoelectronics; 30
Photoelectronics; № 27 (2018): Photoelectronocs; 30
Photoelectronics; № 27 (2018): Photoelectronocs; 30
The pasty solder is used in the technology of the installation of electro-radio elements. Such elements can be microcircuits and optical and X-ray images microelectronic sensors with a hard raster [1]. Tinning of such sensor contact surfaces and prin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::162ae90704b0624d01b7643c38fee663
http://photoelectronics.onu.edu.ua/article/view/150480
http://photoelectronics.onu.edu.ua/article/view/150480
Publikováno v:
Photoelectronics; № 26 (2017); 124-138
The photovoltaic properties of CdS crystals with combined alloying have been investigated. An analytical expression for the dependence of the coefficient of damping of the intensities of exciting and quenching light has been received. For the first t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::336844e3d735f6d4347f759bd2ab199e
http://photoelectronics.onu.edu.ua/article/view/126214
http://photoelectronics.onu.edu.ua/article/view/126214
Publikováno v:
Photoelectronics; No. 25 (2016); 109-113
Photoelectronics; № 25 (2016); 109-113
Photoelectronics; № 25 (2016); 109-113
Abnormal dependence of volt-farad characteristics of «nonideal» heterojunctiоn barrier capacity is investigated. It is shown that in heterojunctions with the big concentration and non-uniform distribution of defects tunnel currents essentially inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::563f91bbb86aedbd0efe96e7fa7da0c1
http://photoelectronics.onu.edu.ua/article/view/157643
http://photoelectronics.onu.edu.ua/article/view/157643
Autor:
Minaeva, O. P., Simanovych, N. S., Zatovskaya, N. P., Karakis, Y. N., Kutalova, M. I., Chemeresiuk, G. G.
Publikováno v:
Photoelectronics; No. 25 (2016); 131-140
Photoelectronics; № 25 (2016); 131-140
Photoelectronics; № 25 (2016); 131-140
The technology of processing of semiconductor crystals is developed in the corona discharge. It is established that as a result of this exposure, the samples acquire alternating spectral sensitivity. The observed phenomenon is explained by the emerge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::6bc60c6eb0d30e37ee6a6925cc6e929d
http://photoelectronics.onu.edu.ua/article/view/157666
http://photoelectronics.onu.edu.ua/article/view/157666
Publikováno v:
Photoelectronics; № 24 (2015); 72-76
A set of studies aimed at clarifying the deviation from the stoichiometry of CuxS compound during the formation and followed over time to establish the characteristics of changes in the chemical composition of the heterojunction components were carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::de298e230525759e6b376937e2dd0e4d
http://photoelectronics.onu.edu.ua/article/view/158110
http://photoelectronics.onu.edu.ua/article/view/158110
Publikováno v:
Photoelectronics; № 23 (2014); 124-130
The paper puts forward a method for determination of semiconductor activation energy in end product. It is illustrated that band gap can be calculated at cutoffs on both axes of graphs ln(I)÷U, measured at different temperatures. Minimum temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::e0b6e8164adbf8e82a56e4fd33af7f21
http://photoelectronics.onu.edu.ua/article/view/158625
http://photoelectronics.onu.edu.ua/article/view/158625