Zobrazeno 1 - 10
of 93
pro vyhledávání: '"KUNTMAN, Hulusi Hakan"'
Autor:
ALAYBEYOĞLU, Ersin1 ealaybeyoglu@itu.edu.tr, KUNTMAN, Hulusi Hakan1
Publikováno v:
Turkish Journal of Electrical Engineering & Computer Sciences. 2016, Vol. 24 Issue 3, p746-761. 16p.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
KAÇAR, Fırat, KUNTMAN, Hulusi Hakan
Publikováno v:
Turkish Journal of Electrical Engineering & Computer Sciences. 2011, Vol. 19 Issue 4, p631-642. 12p.
Autor:
KELEŞ, Sinem, KUNTMAN, Hulusi Hakan
Publikováno v:
Turkish Journal of Electrical Engineering & Computer Sciences. 2011, Vol. 19 Issue 2, p291-301. 11p.
Publikováno v:
Radioengineering, Vol 22, Iss 3, Pp 672-686 (2013)
Radioengineering. 2013, vol. 22, č. 3, s. 672-686. issn 1210-2512
Radioengineering. 2013, vol. 22, č. 3, s. 672-686. issn 1210-2512
In this work, we propose a novel approach called "Normalized Gain Function (NGF) method" to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. Normalized Gain Function T-NGF is
Autor:
KAÇAR, Fırat, KUNTMAN, Hulusi Hakan
Publikováno v:
Volume: 19, Issue: 4 631-642
Turkish Journal of Electrical Engineering and Computer Science
Turkish Journal of Electrical Engineering and Computer Science
This paper presents a high-performance current differencing transconductance amplifier (CDTA), a recently reported active element, especially suitable for analog signal processing applications. A high linearity CMOS configuration for a CDTA is made u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=tubitakulakb::e215df6692edf6f97976755ffbe1997b
https://dergipark.org.tr/tr/pub/tbtkelektrik/issue/12068/144297
https://dergipark.org.tr/tr/pub/tbtkelektrik/issue/12068/144297
Publikováno v:
Informacije MIDEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3825::efb72d9f63a328362f566fd88aa85ed8
http://www.dlib.si/details/URN:NBN:SI:doc-HORFBHZE
http://www.dlib.si/details/URN:NBN:SI:doc-HORFBHZE
Publikováno v:
Informacije MIDEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3825::d87429909236cddfc7b9f282cc6110de
http://www.dlib.si/details/URN:NBN:SI:doc-JGQHYROW
http://www.dlib.si/details/URN:NBN:SI:doc-JGQHYROW
Publikováno v:
Volume: 20, Issue: Sup.2 1359-1368
Turkish Journal of Electrical Engineering and Computer Science
Turkish Journal of Electrical Engineering and Computer Science
In this work, we propose a degraded transistor-based circuit degradation simulation method to investigate the degradation effect in complementary metal-oxide semiconductor (CMOS) biomedical devices. The method is demonstrated on an operational transc