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Publikováno v:
E3S Web of Conferences, Vol 16, p 12001 (2017)
The process technology for the fabrication of 4H-SiC trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) has been developed. The optimized TIVJFETs have been fabricated with self-aligned nickel silicide source and gate contacts using a
Externí odkaz:
https://doaj.org/article/15e148039cec4187b487bc8f4e7e796c
Autor:
Müller, A., Konstantinidis, G., Dragoman, M., Neculoiu, D., Dinescu, A., Androulidaki, M., Kayambaki, M., Stavrinidis, A., Vasilache, D., Buiculescu, C., Petrini, I., Kostopoulos, A., Dascalu, D.
Publikováno v:
In Microelectronics Journal February 2009 40(2):319-321
Autor:
Papadopoulou, E.L., Varda, M., Pennos, A., Kaloudis, M., Kayambaki, M., Androulidaki, M., Tsagaraki, K., Viskadourakis, Z., Durand, O., Huyberechts, G., Aperathitis, E.
Publikováno v:
In Thin Solid Films 2008 516(22):8154-8158
Publikováno v:
12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom
session poster: MO.P.FP14; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::528a0d5b3e7545608ac7fa10b4899ea8
https://hal.archives-ouvertes.fr/hal-02066375
https://hal.archives-ouvertes.fr/hal-02066375
Autor:
Cengher, D. *, Aperathitis, E., Androulidaki, M., Deligeorgis, G., Kayambaki, M., Michelakis, K., Hatzopoulos, Z., Tzanetakis, P., Georgakilas, A.
Publikováno v:
In Materials Science & Engineering B 2001 80(1):241-244
Publikováno v:
In Materials Science & Engineering B 2001 80(1):164-167
Autor:
Aperathitis, E. *, Cengher, D., Kayambaki, M., Androulidaki, M., Deligeorgis, G., Tsagaraki, K., Hatzopoulos, Z., Georgakilas, A.
Publikováno v:
In Materials Science & Engineering B 2001 80(1):77-80
Autor:
Vamvoukakis, K, Stefanakis, D, Stavrinidis, A, Vassilevski, K, Konstantinidis, G, Kayambaki, M, Zekentes, Konstantinos
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2017
physica status solidi (a), Wiley, 2017
International audience; SiC JFETs may have the lowest overall losses of switching devices and can operate at temperatures over 400°C. Over different junction field-effect transistor (JFET) designs the trenched and implanted (TI) gate vertical JFET (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3b29b4a4d0427f00afe214f1fa51bd39
https://hal.science/hal-01705998
https://hal.science/hal-01705998
Autor:
Georgakilas, A *, Tsagaraki, K, Makarona, E, Constantinidis, G, Adroulidaki, M, Kayambaki, M, Aperathitis, E, Pelekanos, N.T
Publikováno v:
In Materials Science in Semiconductor Processing 2000 3(5):511-515