Zobrazeno 1 - 10
of 47
pro vyhledávání: '"KARL W. FRESE"'
Autor:
C. Chen, Karl W. Frese
Publikováno v:
Journal of The Electrochemical Society. 140:1355-1360
Hot hole oxidation of ferrous ethylenediaminetetraacetic acid (EDTA) was observed in the dark at 22 o C using thin Ag films on p-Si substrates. Schottky barrier electrodes were prepared by magnetron sputter deposition of 99.9% Ag on device quality p-
Autor:
Karl W. Frese, C. Chen
Publikováno v:
Journal of The Electrochemical Society. 139:3234-3243
The physical and electrochemical properties of hot carriers at metallized semiconductor electrodes in contact with a redox electrolyte are described. Theoretical ballistic mean‐free paths, , for hot carriers in Ag, Cu, Au, Al, Ru, Pd, and Pt, were
Autor:
C. Chen, Karl W. Frese
Publikováno v:
Journal of The Electrochemical Society. 139:3243-3249
Schottky barrier electrodes were prepared by deposition of thin films of Au on device quality n-Si. Barrier heights for fourteen day old films, determined by high frequency capacitance measurements at open circuit in the presence of 0.3 M each K 4 Fe
Autor:
Karl W. Frese
Publikováno v:
Journal of The Electrochemical Society. 138:3338-3344
We observed reduction to at various oxidized copper electrodes at 22°C. The electrode types included anodized Cu foil, Cu foil thermally oxidized in air, and air‐oxidized Cu electrodeposited on anodized or air‐oxidized Ti foil. The highest rates
Autor:
Karl W. Frese
Publikováno v:
Langmuir. 7:13-15
Autor:
S. Roy Morrison, Karl W. Frese
Publikováno v:
Journal of Vacuum Science and Technology. 17:609-612
Evidence is presented that a conducting band is present in the anodic oxide of GaAs that lies about 1.0±0.3 eV below the GaAs conduction band. The energy of the level is determined by a new electrochemical technique that in a sense is the reverse of
Autor:
S. Roy Morrison, Karl W. Frese
Publikováno v:
Journal of The Electrochemical Society. 126:1235-1241
Electrochemical measurements are used to measure the interface state density at the interface. The techniques are described, including, for example, the use of dimethyl formamide as the solvent to avoid etching the oxide. The advantages of the "EOS"
Autor:
Karl W. Frese
Publikováno v:
Journal of The Electrochemical Society. 130:28-33
Rotating-ring-disk studies of the photoelectrochemical corrosion of n-CdSe (1120) have been made. Flatband potentials for CdSe as a function of light intensity and redox potential were determined. The studies focused on the role of the Se corrosion l
Autor:
Karl W. Frese
Publikováno v:
Journal of Applied Physics. 53:1571-1576
The influence of redox couples on the measured flatband potentials of n‐CdSe was investigated. It is concluded that flatband shifts are due to interface surface state‐redox electrolyte carrier exchange that leads to variable interface state charg
Publikováno v:
Applications of Surface Science. 8:290-298
We have investigated the grain-boundary and surface damage effects on the stabilization of n-Si photoelectrode using the rotating ring-disc electrode technique. The effect of surface damage is to lower the stabilization efficiency. We conclude that t