Zobrazeno 1 - 10
of 48
pro vyhledávání: '"K.Y. Liao"'
Publikováno v:
IEEE Electron Device Letters. 14:252-255
The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9ac68801ecb101270485337fb6c612
https://doi.org/10.1109/55.215184
https://doi.org/10.1109/55.215184
Publikováno v:
2005 Quantum Electronics and Laser Science Conference.
A polarized heterodyne ellipsometer to characterize TN-LC by elliptical parameters of polarization state is proposed. The twist angle and untwisted phase retardation can be measured precisely that TN-LC is verified as an elliptical retarder properly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a9972f2a0dce6abd14281e32369d6ba
https://doi.org/10.1109/qels.2005.1549214
https://doi.org/10.1109/qels.2005.1549214
Autor:
M.F. Lu, S.W. Sun, W.J. Chen, A. Kuo, Y.S. Hsieh, C.H. Hsu, D.F. Chen, W.S. Liao, D. Chen, H.S. Lin, S. Huang-Lu, W.T. Shiau, K.Y. Liao, H. Tang, J.R. Hwang, Y.C. Liu, J.J. Shen, J.H. Ho, W.M. Lin
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
For the first time, 45 nm PMOS devices on the only 4-fold symmetry zone of [110] surface substrates were demonstrated with excellent diffusion control in the S/D extension region. A 30% drive current enhancement was observed compared to devices on co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f9cb59b66fe0fb75e3e85c8f7303f0
https://doi.org/10.1109/vlsit.2004.1345410
https://doi.org/10.1109/vlsit.2004.1345410
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2174ece3e5cda5256f11834389bea53f
https://doi.org/10.1109/vtsa.1993.263668
https://doi.org/10.1109/vtsa.1993.263668
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
A unified analytical model that relates the increase of current gain to forward current stress is presented for both poly emitter n-p-n and p-n-p transistors. This model is based on electromigration of atomic hydrogen and its subsequent passivation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c8d8b415ec7bcacee0b454ce9b5bba
https://doi.org/10.1109/iedm.1993.347288
https://doi.org/10.1109/iedm.1993.347288
Publikováno v:
IEEE Electron Device Letters. 14:4-6
Boron-doped polysilicon emitter p-n-p transistors show current gain ( beta ) increase after forward current stress and recovery by subsequent low-temperature annealing. The results of isothermal and isochronal annealing suggest that the dissociation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db0e2fcb3af0b94d28530d5a1c12af8
https://doi.org/10.1109/55.215082
https://doi.org/10.1109/55.215082
Conference
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Autor:
K.Y. Liao, J.H. Liang
New formulae for simulating nuclear stopping processes are fitted for the Universal interatomic potential. In addition to the incident-ion energy variable, a new impact parameter variable is suggested in the new fitting formulae. Nuclear stopping up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eaf2d5194150a272ba72511ce25ccb4
https://doi.org/10.1016/b978-0-444-82334-2.50125-8
https://doi.org/10.1016/b978-0-444-82334-2.50125-8
Akademický článek
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Conference
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