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Autor:
K.W. Kobayashi
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:2116-2122
This paper reports on the results of a new Darlington cascode (DCAS) feedback amplifier topology implemented with 0.5 mum E-mode GaAs PHEMT technology. The Darlington cascode employs active self-bias and a linearizing Darlington cascode circuit for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b067648f1d1e4b5e5f04c5ff2d6a47ae
https://doi.org/10.1109/jssc.2007.904150
https://doi.org/10.1109/jssc.2007.904150
Autor:
K.W. Kobayashi
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
This paper reports on a novel InGaP HBT Darlington RF amplifier which employs dynamic feedback linearization in order to improve IP3 and P1dB compression. The dynamic feedback amplifier obtains 20 dB gain, a 0.05-4 GHz BW, a P1dB and IP3 of 21.2 dBm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5740c6ea8e4f2a596761eec1f386344e
https://doi.org/10.1109/csics07.2007.53
https://doi.org/10.1109/csics07.2007.53
Autor:
K.W. Kobayashi
Publikováno v:
2006 Asia-Pacific Microwave Conference.
This paper reports on a 0.1-3 GHz broadband matched Darlington feedback amplifier with over 40 dBm of OIP3 operating from a 5V supply. The Darlington performance is enabled by 0.5um E- mode PHEMTs with fT ~ 30 GHz. The PHEMT Darlington achieves 13 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2975c4f8b49e89eb13a4d0815d1ff64c
https://doi.org/10.1109/apmc.2006.4429586
https://doi.org/10.1109/apmc.2006.4429586
Autor:
K.W. Kobayashi
Publikováno v:
2006 IEEE Compound Semiconductor Integrated Circuit Symposium.
This paper reports the first results of a new Darlington cascode topology implemented with 0.5mum E-mode PHEMTs. The Darlington cascode employs active self-bias and a linearizing Darlington cascode (DCAS) circuit for achieving robust bias and enhance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f6a116256819ba5eef52bc71418da3
https://doi.org/10.1109/csics.2006.319934
https://doi.org/10.1109/csics.2006.319934
Autor:
A.K. Oki, K.W. Kobayashi
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
A direct-coupled low noise amplifier with less than 2.5 dB noise figure up to 4.3 GHz has been demonstrated using 2 /spl mu/m emitter-width GaAs HBTs. A noise figure of 2.2-2.5 dB and a nominal gain of 33 dB has been achieved with a 4.3 GHz 3-dB band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dfdd1baa7c2e1461f6a1e5d254aeea5
https://doi.org/10.1109/gaas.1994.636989
https://doi.org/10.1109/gaas.1994.636989
Autor:
K.W. Kobayashi
Publikováno v:
IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..
This paper reports on the first results of a self-biased e-mode PHEMT Darlington amplifier. The e-mode PHEMTs enable a FET Darlington implementation while a new Darlington active bias topology reduces bias variation over temperature and supply, and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d44dace8a0360326d4728d534da3d4
https://doi.org/10.1109/csics.2005.1531769
https://doi.org/10.1109/csics.2005.1531769
Autor:
K.W. Kobayashi
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.
A 3.6 k/spl Omega/ InP HBT transimpedance amplifier (TIA) has been demonstrated with a bandwidth of 60 GHz. Gain flatness of /spl plusmn/2 dB and DC power of 271 mW has also been obtained. This TIA benchmarks the best gain-bandwidth product (GBP) of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249a66d9819c6137faf707ac172cc561
https://doi.org/10.1109/rfic.2003.1213892
https://doi.org/10.1109/rfic.2003.1213892
Autor:
K.W. Kobayashi
Publikováno v:
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
This work features a 40 Gb/s common-base transimpedance amplifier (TIA) design that employs electronically tunable transimpedance to compensate for various combinations of photodetector and hybrid interconnect parasitics. A tuning transimpedance BW r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aa3fcf83ebaa27cfb3783ffe8348f93
https://doi.org/10.1109/gaas.2002.1049050
https://doi.org/10.1109/gaas.2002.1049050
Autor:
L.W. Yang, K.W. Kobayashi, D.C. Steit, A.K. Oki, H.C. Yen, P.C. Grossman, T.R. Block, L.T. Tran, A. Gutierrez-Aitken, L.G. Callejo, J. Macek, S. Maas
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
We report the first InP HBT MMIC power amplifier chip results at K-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC which achieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higher power MMIC at 18.5 GHz achieved 25 dBm output power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a034827aa9b32d9f74cf3810b01f3629
https://doi.org/10.1109/gaas.1999.803730
https://doi.org/10.1109/gaas.1999.803730