Zobrazeno 1 - 10
of 52
pro vyhledávání: '"K.W. Kirchner"'
Autor:
Kenneth A. Jones, Puneet Suvarna, K.W. Kirchner, Michael A. Derenge, Shadi Shahedipour-Sandvik
Publikováno v:
Solid-State Electronics. 101:23-28
An AlN annealing cap has been developed for GaN films grown on sapphire substrates that enables them to be annealed at temperatures as high as 1300 °C for times as long as 30 min or times as long as 120 min at a temperature of 1150 °C without creat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69abb490448bdcdad326b52c6a14aaac
https://doi.org/10.1016/j.sse.2014.06.027
https://doi.org/10.1016/j.sse.2014.06.027
Autor:
Kenneth A. Jones, Joshua R. Smith, Edward A. Preble, Randy P. Tompkins, K. Udwary, Fatemeh Shahedipour-Sandvik, Puneet Suvarna, Jacob H. Leach, K.W. Kirchner, Jeffrey M. Leathersich
Publikováno v:
Journal of Electronic Materials. 43:850-856
We have examined the performance of gallium nitride (GaN) high-power Schottky diodes fabricated on unintentionally doped (UID) metalorganic chemical vapor deposition (MOCVD) films grown simultaneously on four substrates ranging in threading dislocati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e1d7a731fd34770b6e4dc1b0d5241a
https://doi.org/10.1007/s11664-014-3021-9
https://doi.org/10.1007/s11664-014-3021-9
Autor:
Fatemeh Shahedipou-Sandvik, Randy P. Tompkins, Puneet Suvana, J. R. Smith, Michael A. Derenge, Jacob H. Leach, Robert Metzger, K.W. Kirchner, Mihir Tungare, Shuai Zhou, Kenneth A. Jones
Publikováno v:
ECS Transactions. 50:297-305
Point defects in the GaN cause premature breakdown in GaN Schottky diodes at least to the same extent as dislocations do. The most likely cause is impact ionization of deep acceptors. A primary deep acceptor in MOCVD-grown GaN is C. Another is a Ga v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6a83a0e52b37c110d9d373d0c1438f
https://doi.org/10.1149/05003.0297ecst
https://doi.org/10.1149/05003.0297ecst
Autor:
Jacob H. Leach, Shuai Zhou, Kenneth A. Jones, Fatemeh Shahedipour-Sandvik, Michael A. Derenge, Robert Metzger, Mihir Tungare, Randy P. Tompkins, Puneet Suvarna, Cuong B. Nguyen, Timothy A. Walsh, G. Mulholland, K.W. Kirchner
Publikováno v:
Solid-State Electronics. 79:238-243
Hydride vapor phase epitaxy (HVPE) grown GaN was evaluated for high power Schottky diodes (SDs) because it contains much less carbon and grows much more rapidly than other typical growth methods. The results are encouraging for applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e17e37230809186419157ef0c617bdd
https://doi.org/10.1016/j.sse.2012.07.003
https://doi.org/10.1016/j.sse.2012.07.003
Autor:
Kenneth A. Jones, Puneet Suvarna, K. Udwary, Shuai Zhou, Randy P. Tompkins, Michael A. Derenge, Joshua R. Smith, Mihir Tungare, Jacob H. Leach, Edward A. Preble, Fatemeh Shahedipour-Sandvik, Greg Mulholland, K.W. Kirchner
Publikováno v:
ECS Transactions. 45:17-25
With its wide bandgap and associated high critical field, GaN is a suitable material for high power electronics. Our group has identified carbon incorporation into the drift region as problematic for the development of GaN power Schottky diodes. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f3552101cb48e4da64d6ac97c4036e
https://doi.org/10.1149/1.3701521
https://doi.org/10.1149/1.3701521
Publikováno v:
Journal of Crystal Growth. 312:2661-2670
GaN films were grown by metal organic chemical vapor deposition on TaC substrates that were created by pulsed laser deposition of TaC onto (0 0 0 1) SiC substrates at ∼1000 °C. This was done to determine if good quality TaC films could be grown, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a95a2cb5418f2f2365b032a1bab248
https://doi.org/10.1016/j.jcrysgro.2010.06.010
https://doi.org/10.1016/j.jcrysgro.2010.06.010
Autor:
Michael A. Derenge, Tsvetanka Zheleva, Tangali S. Sudarshan, A. Bolonikov, S.S. Hullavarad, S. Dhar, R. D. Vispute, Kenneth A. Jones, K.W. Kirchner, Mark C. Wood
Publikováno v:
Journal of Electronic Materials. 37:917-924
The effectiveness of AlN/BN and graphite annealing caps for ion implanted SiC was examined morphologically, structurally, chemically, and electrically. The AlN/BN cap more effectively blocks the out-diffusion of silicon because it is essentially iner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b24e89d2dbe05d88fcebbd7a217c4f6
https://doi.org/10.1007/s11664-008-0405-8
https://doi.org/10.1007/s11664-008-0405-8
Publikováno v:
Materials Science Forum. :213-218
Double and triple crystal rocking curve and peak position maps are constructed for a 4HSiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90º, and an asymmetric (1 23 6) reflection fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eacf53eefa40eff2d80e31396a20887
https://doi.org/10.4028/www.scientific.net/msf.556-557.213
https://doi.org/10.4028/www.scientific.net/msf.556-557.213
Autor:
Michael A. Derenge, Shiva S. Hullavarad, K.W. Kirchner, Tangali S. Sudarshan, Sankar Dhar, Tsvetanka Zheleva, R. D. Vispute, A. Bolonikov, Kenneth A. Jones, Mark C. Wood
Publikováno v:
Materials Science Forum. :575-578
4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe45eb4422e13ef451047e9a4e21f59
https://doi.org/10.4028/www.scientific.net/msf.556-557.575
https://doi.org/10.4028/www.scientific.net/msf.556-557.575
Autor:
Matthew H. Ervin, Michael A. Derenge, Kenneth A. Jones, Shiva S. Hullavarad, K.W. Kirchner, Tsvetanka Zheleva, R. D. Vispute
Publikováno v:
Solid-State Electronics. 48:1867-1872
AlN deposited on 4H–SiC by pulsed laser deposition (PLD) did not noticeably deteriorate when it was annealed in an Ar atmosphere at 1500 °C for 30 min, but it contained numerous thermal etch pits when it was annealed at 1600 °C as determined by S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb05cfad7cb1da5908428650b36a43b
https://doi.org/10.1016/j.sse.2004.05.079
https://doi.org/10.1016/j.sse.2004.05.079