Zobrazeno 1 - 10
of 159
pro vyhledávání: '"K.T. Short"'
Publikováno v:
Scopus-Elsevier
Amorphization of (100) silicon has been studied during elevated-temperature implantation with keV heavy ions. The amorphization process is very sensitive to the balance between defect production and annihilation rates, the latter resulting from dynam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b6844a6c8e2e25bad7a6aa8ae22b73
https://doi.org/10.1016/0168-583x(90)90154-m
https://doi.org/10.1016/0168-583x(90)90154-m
Publikováno v:
Photorefractive Materials, Effects, and Devices.
Although the photorefractive sensitivity of the semiconductors is many orders of magnitude larger than the oxides, their small Pockels electro-optic coefficient has been a serious drawback. By taking advantage of the quadratic effects near the band-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1804472b2ca0efa696e23c76842e7c6c
https://doi.org/10.1364/pmed.1991.mc1
https://doi.org/10.1364/pmed.1991.mc1
Publikováno v:
Electronics Letters. 26:555
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e419983d0cc755da9a3ee9a3d2af2071
https://doi.org/10.1049/el:19900361
https://doi.org/10.1049/el:19900361
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :731-736
The annealing behaviour of high dose (1015−1016 cm−2) 80 keV Sb implants into (100) silicon has been investigated in detail, using transmission electron microscopy, Rutherford backscattering and channeling, 4 pt. probe (electrical) measurements a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19cd23e80927138a2ddfb358f306266b
https://doi.org/10.1016/0167-5087(83)90875-x
https://doi.org/10.1016/0167-5087(83)90875-x
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2:761-765
Heavy ion damage in silicon has been investigated by ion channeling and transmission electron microscopy techniques. Implantation temperatures between 77 K and 720 K have been employed. Our results suggest that significant annealing of displacement d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bddafb94eb4ca5224fadbf8d300ec07
https://doi.org/10.1016/0168-583x(84)90310-0
https://doi.org/10.1016/0168-583x(84)90310-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :303-307
Rutherford backscattering and channeling analysis of high dose, room temperature implanted Ge has revealed an anomalous near-surface yield deficit. The effect is attributed to the absorption of oxygen and other light mass contaminants into a highly p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b297bdca849b4fe8fc31c89c2be27b
https://doi.org/10.1016/0167-5087(83)90815-3
https://doi.org/10.1016/0167-5087(83)90815-3
Autor:
James Williams, K.T. Short
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :767-771
High resolution Rutherford backscattering and channeling analysis has been used to investigate the effect of electrically active dopants on the solid phase epitaxial regrowth rate in silicon. Single and dual implants of In, Sn and Sb into (100) silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2bbdf9dff0dcf2ef139859efbab520
https://doi.org/10.1016/0167-5087(83)90881-5
https://doi.org/10.1016/0167-5087(83)90881-5
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :239-242
Ion scattering, ion channeling, and cross-section electron microscopy were used to investigate Si single crystals implanted with 205Tl+ (0.29−1×1016 Tl/cm2, 90 keV) and annealed with pulses (1.6 J/cm2, 15 ns) from a ruby laser. Coherent precipitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe10516e4a5bfc32c776d8e1a19ca0a
https://doi.org/10.1016/0167-5087(83)90806-2
https://doi.org/10.1016/0167-5087(83)90806-2
Publikováno v:
Ultramicroscopy. 26:133-142
We have examined the contrast in the high-angle annular detector of a scanning transmission electron microscope from high-atomic-number impurity atoms in a low-atomic-number substrate. We find significant variations when the incident electron beam is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc263fc7549abb9c57f5eafb0e2d573
https://doi.org/10.1016/0304-3991(88)90385-3
https://doi.org/10.1016/0304-3991(88)90385-3
Autor:
James Williams, K.T. Short
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 191:537-542
High resolution channeling, combined with TEM, has been used to investigate ion implant damage, atom location and phase changes in high dose Dy + , Ar + and Sb + implanted (100) Fe. Results indicate that amorphous damage produced by Dy + implantation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11ede484798fbb2f128077363e837fb
https://doi.org/10.1016/0029-554x(81)91058-2
https://doi.org/10.1016/0029-554x(81)91058-2