Zobrazeno 1 - 10
of 63
pro vyhledávání: '"K.S.K. Kwa"'
Publikováno v:
Advanced Science Letters. 24:8962-8965
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe1f3dfa8e58da0421d575ca12344a10
https://doi.org/10.1166/asl.2018.12384
https://doi.org/10.1166/asl.2018.12384
Publikováno v:
Applied surface science, 2020, Vol.523, pp.146516 [Peer Reviewed Journal]
Silicon nanowires (SiNWs) exhibit unique electrical, thermal, and optical properties compared to bulk silicon which make them suitable for various device applications. To realize nanowires in real applications, large-scale and low-cost fabrication me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa51f1228d1d0a0f4fd9ce4030414500
https://doi.org/10.1016/j.apsusc.2020.146516
https://doi.org/10.1016/j.apsusc.2020.146516
Publikováno v:
Applied Mechanics and Materials. 660:168-172
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphoru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85b9770a159e9e504bfdaa65e310a89f
https://doi.org/10.4028/www.scientific.net/amm.660.168
https://doi.org/10.4028/www.scientific.net/amm.660.168
Publikováno v:
Nanotechnology. 27(42)
The reliable and controllable fabrication of silicon nanowires is achieved, using mature CMOS technology processes. This will enable a low-cost route to integrating novel nanostructures with CMOS logic. The challenge of process repeatability has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80b77968628bac9968ee0d5597641547
https://pubmed.ncbi.nlm.nih.gov/27608370
https://pubmed.ncbi.nlm.nih.gov/27608370
Publikováno v:
Advanced Materials Research. 629:115-121
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching has been developed using Silicon-on Insulator (SOI) as the starting substrate. The design of experiments for the optimization of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::551d3a89c7810696e1302f0702676ac5
https://doi.org/10.4028/www.scientific.net/amr.629.115
https://doi.org/10.4028/www.scientific.net/amr.629.115
Publikováno v:
IEEE Transactions on Electron Devices. 56:3041-3048
The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage gain of a push-pull inverting amplifier is assessed by technology-computer-aided-design (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5336564bebf7239a7b0ac6d944373ae
https://doi.org/10.1109/ted.2009.2030721
https://doi.org/10.1109/ted.2009.2030721
Autor:
L.S. Driscoll, Anthony O'Neill, Douglas J. Paul, Sarah H. Olsen, Sanatan Chattopadhyay, K.S.K. Kwa, Matthew J. Temple
Publikováno v:
Thin Solid Films. 508:338-341
The benefit of high performance strained Si CMOS in terms of technology generations is quantified. It is shown that a 0.3 μm gate length strained Si/Si 0.75 Ge 0.25 CMOS technology has the same gate delay as conventional technology having an effecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::affa6bc884315a36f6647e6fa0b8e364
https://doi.org/10.1016/j.tsf.2005.07.347
https://doi.org/10.1016/j.tsf.2005.07.347
Autor:
Steve Bull, Y.L. Tsang, Sanatan Chattopadhyay, R Agaiby, Anthony O'Neill, K.S.K. Kwa, Sarah H. Olsen, P. Dobrosz, Goutam Kumar Dalapati
Publikováno v:
IEEE Transactions on Electron Devices. 53:1142-1152
Surface channel strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrates (VSs) have been established as an attractive avenue for extending Si CMOS performance as dictated by Moore's law. The performance of a surface channel Si n-MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a04de561ec5bb13eab10e16af8638042
https://doi.org/10.1109/ted.2006.872086
https://doi.org/10.1109/ted.2006.872086
Autor:
Anthony O'Neill, A. G. Cullis, Sarah H. Olsen, D. J. Norris, L.S. Driscoll, Sanatan Chattopadhyay, Douglas J. Paul, K.S.K. Kwa
Publikováno v:
IEEE Transactions on Electron Devices. 51:1245-1253
Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication used high thermal budget processes and virtual substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7a426838d3a878ca81ef3e05fbad03
https://doi.org/10.1109/ted.2004.830652
https://doi.org/10.1109/ted.2004.830652
Publikováno v:
Solid-State Electronics. 48:1407-1416
The purpose of this article is to briefly review the recent progress in terms of mobility and drive current enhancements achieved in strained-Si n- and p-metal oxide semiconductor field effect transistors (MOSFETs). Strained Si MOSFETs are potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb2e5e42421f5d3defb4daf053766566
https://doi.org/10.1016/j.sse.2004.01.018
https://doi.org/10.1016/j.sse.2004.01.018