Zobrazeno 1 - 10
of 36
pro vyhledávání: '"K.S. Krisch"'
Autor:
Paul E. Dodd, Martin L. Green, G.L. Hash, P.J. Silverman, L.P. Schanwald, K.S. Krisch, F.W. Sexton, Marty R. Shaneyfelt, Daniel M. Fleetwood, B. E. Weir, R.A. Loemker
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2509-2518
No correlation was observed between single-event gate rupture (SEGR) and precursor damage by heavy-ion irradiation for 7-nm thermal and nitrided oxides. Precursor ion damage at biases below SEGR threshold for fluence variations over three orders of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::504ffd62057788987c0b5a6ec103c786
https://doi.org/10.1109/23.736492
https://doi.org/10.1109/23.736492
Publikováno v:
IEEE Electron Device Letters. 17:521-524
As gate oxides become thinner, in conjunction with scaling of MOS technologies, a discrepancy arises between the gate oxide capacitance and the total gate capacitance, due to the increasing importance of the carrier distributions in the silicon and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd6592146ec6b1f2f45ff5dce7f7fe9
https://doi.org/10.1109/55.541768
https://doi.org/10.1109/55.541768
Publikováno v:
IEEE Transactions on Electron Devices. 43:982-990
We report on a quantitative study of boron penetration from p/sup +/ polysilicon through 5- to 8-nm gate dielectrics prepared by rapid thermal oxidation in O/sub 2/ or N/sub 2/O. Using MOS capacitor measurements, we show that boron penetration expone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da7e479e05851d6e2fd1526b862113c
https://doi.org/10.1109/16.502134
https://doi.org/10.1109/16.502134
Publikováno v:
Journal of Applied Physics. 70:2185-2194
The charge‐trapping characteristics of nitrided oxide and reoxidized nitrided oxide (ROXNOX) gate dielectrics following constant‐current stressing are studied, with an emphasis on the behavior of positive trapped charge. The positive charge is at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448700746ad8f0d246ac24fa3bc9f852
https://doi.org/10.1063/1.349457
https://doi.org/10.1063/1.349457
Publikováno v:
IEEE Transactions on Electron Devices. 38:2036-2041
The electrical characteristics of thin (10 nm) MOS gate dielectrics formed at 850 degrees C by low-pressure furnace nitridation of SiO/sub 2/ followed by an oxygen anneal (reoxidation) are described. The ROXNOX process is demonstrated to be readily s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e0a0e177d603e498c34fde92b5f02f
https://doi.org/10.1109/16.83727
https://doi.org/10.1109/16.83727
Autor:
B. E. Weir, D. Hwang, Muhammad A. Alam, Gregory Timp, Frieder H. Baumann, Yi Ma, Don Monroe, T.W. Sorsch, P.J. Silverman, K.S. Krisch, Glenn B. Alers, C.T. Liu
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
We study breakdown in high-quality 2-7 nm gate dielectrics, and find that soft breakdown becomes more likely for thinner oxides and for oxides stressed at lower voltages. For 2 nm oxides, an increase in gate noise is the only precise indication of so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8789901b2d6a0d3c2fa0c92a65f06e55
https://doi.org/10.1109/iedm.1997.649463
https://doi.org/10.1109/iedm.1997.649463
Autor:
A. Kornblit, J. T. C. Lee, M. Cheng, D. Monroe, Sheila Vaidya, Raymond A. Cirelli, S.V. Moccio, K.J. O'Connor, S. Saito, G.P. Schwartz, G. R. Weber, H. Ito, D.E. Ibbotson, Conor S. Rafferty, Martin L. Green, M.R. Pinto, Dale C. Jacobson, Kwok K. Ng, K. Kasama, S.A. Eshraghi, T. Itani, K. V. Guinn, Joze Bevk, T. Horiuchi, Leonard C. Feldman, M. Nakamae, K.S. Krisch, Rodney C. Kistler, Y. O. Kim, William M. Mansfield, E. Ikawa, T. Tounai, D. Brasen, S.C. McNevin, C. A. King, Steven James Hillenius, H. Miyamoto, Akihiko Ishitani, D.M. Boulin, M.L. O'Malley, E. Hasagawa, F.P. Klemens, L. Manchanda
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
A 0.25 /spl mu/m coded feature CMOS technology has been developed for high-performance, low-power ASIC applications. Critical process features include 248 nm DUV lithography on all levels, profiled twin tubs by high energy implantation (HEI), dual Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df7830f3e286f2a93189abf6ef9c60e4
https://doi.org/10.1109/vlsit.1995.520860
https://doi.org/10.1109/vlsit.1995.520860
Publikováno v:
IEEE Electron Device Letters. 13:217-219
Reoxidized nitrided oxide (ROXNOX) gate dielectrics can be used to block the diffusion of boron into the MOS channel region. However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3279e5c1fd12fa4db8d77d98fa4517d
https://doi.org/10.1109/55.145026
https://doi.org/10.1109/55.145026
Autor:
Don Monroe, Glenn B. Alers, B. E. Weir, Martin L. Green, T. Sorsch, Yi Ma, P. J. Silverman, Muhammad A. Alam, J. D. Bude, Gregory Timp, K.S. Krisch, M.R. Frei, C. T. Liu
Publikováno v:
MRS Proceedings. 567
An understanding of dielectric breakdown mechanisms is critical for continued oxide scaling. Although working transistors have been demonstrated with sub-2nm SiO2 gate dielectrics, the manufacturability of such devices hinges on the reliability of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11d8b335ff7cb978e3c2c53a701a0b56
https://doi.org/10.1557/proc-567-301
https://doi.org/10.1557/proc-567-301
Autor:
S. Martin, S. Donati, Giovanni Ghione, Muhammad A. Alam, K.S. Krisch, Fabrizio Bonani, M.R. Pinto, H.H. Vuong
Publikováno v:
Scopus-Elsevier
The Impedance Field Method (IFM) for physics-based noise modeling of electron devices is applied, for the first time, to evaluate the RF noise performance of submicron MOSFETs. Starting with an accurate representation of the structure and doping of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd0d499dd8996a77967c25186fe17ce6
http://hdl.handle.net/11583/1499331
http://hdl.handle.net/11583/1499331
