Zobrazeno 1 - 10
of 129
pro vyhledávání: '"K.P. Roenker"'
Autor:
K.P. Roenker, A. Breed
Publikováno v:
Analog Integrated Circuits and Signal Processing. 56:135-141
This paper compares the scaling characteristics of the three leading multi-gate MOSFET designs, namely the finFET, trigate and omega-gate. A commercial numerical device simulator is employed using a common set of material parameters, device physics m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::585a2f6920c36c13141c13333ae84aab
https://doi.org/10.1007/s10470-007-9129-6
https://doi.org/10.1007/s10470-007-9129-6
Autor:
R. Sampathkumaran, K.P. Roenker
Publikováno v:
Solid-State Electronics. 49:1292-1296
In this study, the effects of self-heating on the f T and f max frequencies have been investigated in NpN SiGe heterojunction bipolar transistors (HBTs) by two-dimensional numerical device modeling using a commercial simulator. The device studied was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a4314a5141e831407db6e306e6f4bb
https://doi.org/10.1016/j.sse.2005.05.008
https://doi.org/10.1016/j.sse.2005.05.008
Autor:
S. Srivastava, K.P. Roenker
Publikováno v:
Solid-State Electronics. 48:461-470
The operation and performance of the InP-based uni-traveling carrier photodiode (UTC-PD) has been studied using a two dimensional, drift–diffusion approach utilizing a commercial numerical device simulator. The UTC-PD has been proposed as a replace
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cb6f2eda2562e488b42915a1ec128a4
https://doi.org/10.1016/j.sse.2003.08.004
https://doi.org/10.1016/j.sse.2003.08.004
Publikováno v:
Solid-State Electronics. 46:2199-2208
The formation and characteristics of a parasitic conduction band barrier located at a SiGe/Si heterojunction have been investigated using a commercial numerical simulator and a simple, three-region model of a heterojunction with a nearby p–n juncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321752b51e96fa52f9733d443ec3cb6f
https://doi.org/10.1016/s0038-1101(02)00225-3
https://doi.org/10.1016/s0038-1101(02)00225-3
Publikováno v:
Solid-State Electronics. 46:1485-1493
Device modeling using a commercial numerical simulator has been employed for SiGe heterojunction bipolar transistor (HBT) device design for high frequency (10 GHz), high power applications. In this study, the effects of the design of the epitaxial la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ceafe5ac2b81ca84240a500035862933
https://doi.org/10.1016/s0038-1101(02)00093-x
https://doi.org/10.1016/s0038-1101(02)00093-x
Autor:
K.P. Roenker, P Mushini
Publikováno v:
Solid-State Electronics. 44:2239-2246
The effects of high carrier densities near the base–collector (B–C) heterojunction in npn SiGe heterojunction bipolar transistors during device operation at high current densities has been investigated using a commercial numerical device simulato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8742f89415a95960b476af078715ebc3
https://doi.org/10.1016/s0038-1101(00)00201-x
https://doi.org/10.1016/s0038-1101(00)00201-x
Publikováno v:
Solid-State Electronics. 44:991-1000
A modified Gummel–Poon model has been developed for the pnp heterojunction bipolar transistor which matches thermionic emission–diffusion of holes across the emitter–base heterojunction with drift–diffusion transport across a graded base. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645ffc409c496f9f56f32e22abbc363b
https://doi.org/10.1016/s0038-1101(00)00007-1
https://doi.org/10.1016/s0038-1101(00)00007-1
Autor:
P. Mushini, K.P. Roenker
Publikováno v:
Microelectronics Journal. 31:353-358
The formation of a parasitic barrier to electron flow at the collector–base junction in SiGe heterojunction bipolar transistors during device operation at high current densities is analyzed. Due to the valence band discontinuity at the base–colle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::012bffaaac8e2ae3264714bebf5cf8aa
https://doi.org/10.1016/s0026-2692(99)00153-6
https://doi.org/10.1016/s0026-2692(99)00153-6
Publikováno v:
Journal of Applied Physics. 87:1467-1473
Starting with the 4×4 Luttinger–Kohn Hamiltonian and making use of the axial approximation, we calculate the emitter current as a function of the applied forward emitter-base bias for a typical Pnp AlGaAs/GaAs single heterojunction bipolar transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e04fcfa05162816a5b8d39cddf8da2b
https://doi.org/10.1063/1.372036
https://doi.org/10.1063/1.372036
Publikováno v:
Journal of Applied Physics. 86:7065-7070
The effects of Shockley–Read–Hall, Auger, radiative, and intrinsic surface base recombination processes in the emitter-base space-charge region on the current gain of Pnp AlGaAs/GaAs heterojunction bipolar transistors are analyzed. At low forward
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75938fa2e73b973e85fc55d0cf2d3407
https://doi.org/10.1063/1.371731
https://doi.org/10.1063/1.371731