Zobrazeno 1 - 10
of 61
pro vyhledávání: '"K.P. MacWilliams"'
Publikováno v:
Microelectronics Reliability. 37:1747-1754
This work shows that the worst-case gate voltage stress condition for LDD nMOSFETs is a strong function of the channel length, drain voltage, and operating temperature. A new cross-over behavior of the worst-case gate voltage condition is reported at
Publikováno v:
IEEE Transactions on Electron Devices. 44:268-276
Since hot carrier effects can pose a potential limit to device scaling, hot-carrier-induced device degradation has been one of the major concerns in modern device technology. Currently, there is a great interest in pursuing low-temperature operation
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1948-1956
We show that the thresholds for picosecond (psec) laser pulse-induced latchup and energetic particle-induced latchup are well correlated over a range of bulk CMOS test structures designed to be susceptible to latchup. The spatial length of the latchu
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2146-2151
Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V/sub ot/ and V/sub it/ were separated using th
Publikováno v:
MRS Online Proceedings Library. 265:125-130
We have previously shown greatly enhanced resistance to stressinduced hillock formation through fluorine incorporation in aluminum films. Utilizing relatively low F incorporation (
Autor:
K.P. MacWilliams, James D. Plummer
Publikováno v:
IEEE Transactions on Electron Devices. 38:2619-2631
The development of a complete complementary MESFET technology is presented. The state-of-the-art, fully implanted, CMOS-like process uses Shannon implants together with a refractory silicide Schottky-gate material to combine high gate barrier heights
Autor:
Jonathan F. Stebbins, Zhenjiang Cui, David M. Gage, Alexandros T. Demos, Amir Al-Bayati, Eric P. Guyer, Reinhold H. Dauskardt, K.P. MacWilliams
Publikováno v:
2006 International Interconnect Technology Conference.
Ultra-violet radiation curing has emerged as a promising technique for enhancing the glass structure and mechanical properties of low-k organosilicate thin films. The present work examines the effects of UV curing on the adhesive and cohesive fractur
Publikováno v:
IEEE International SOI Conference.
Publikováno v:
1992 Symposium on VLSI Technology Digest of Technical Papers.
It is pointed out that wafer-mapping of physical stresses by X-ray diffraction of a silicided CMOS process shows regions of both very high and low stress levels. The regions of high stress consistently have increased subthreshold slopes and are much
Autor:
K.P. MacWilliams, B.K. Janousek
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
The authors compare and contrast the failure modes in GaAs and Si IC technology, assess the demonstrated levels of reliability achieved in these technologies, and compare the distinct challenges facing the GaAs and Si communities as they attempt to q