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pro vyhledávání: '"K.P. MacWiliams"'
Publikováno v:
IEEE Electron Device Letters. 12:375-378
The optimization of lightly doped drain (LDD) devices to maximize hot-carrier device lifetime at cryogenic temperature is studied. The hot-carrier-induced device degradation behavior and mechanisms of the various LDD and conventional devices are inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8624018a4a540145d04fafa73f5cfd82
https://doi.org/10.1109/55.103612
https://doi.org/10.1109/55.103612
