Zobrazeno 1 - 10
of 172
pro vyhledávání: '"K.P. Hilton"'
Autor:
Trevor Martin, Anders Lundskog, Galia Pozina, David J. Wallis, Anelia Kakanakova-Georgieva, R. Lossy, Michael J. Uren, Erik Janzén, Martin Kuball, Joachim Würfl, J.O. Maclean, K.P. Hilton, James W Pomeroy, Gernot Riedel, R. Pazirandeh, Urban Forsberg, Frank Brunner
Publikováno v:
IEEE Electron Device Letters. 30:103-106
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5799ab49207b6591a6b824be0b6ebf30
https://doi.org/10.1109/led.2008.2010340
https://doi.org/10.1109/led.2008.2010340
Autor:
A.J. Hydes, K.P. Hilton, A.B. Horsfall, Christopher Mark Johnson, A.G. Munday, Nicolas G. Wright, Michael J. Uren, Konstantin Vassilevski, Irina P. Nikitina
Publikováno v:
Materials Science Forum. :1063-1066
Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5178086c64e42124b4f565d8517228e1
https://doi.org/10.4028/www.scientific.net/msf.600-603.1063
https://doi.org/10.4028/www.scientific.net/msf.600-603.1063
Autor:
Konstantin Vassilevski, CM Johnson, Michael J. Uren, Nicholas G. Wright, Anthony O'Neill, A.G. Munday, Irina P. Nikitina, K.P. Hilton, Alton B. Horsfall, A.J. Hydes
Publikováno v:
Materials Science Forum. :873-876
High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial 4H-SiC epitaxial wafers with 10, 20 and 45 +m thick n layers (with donor concentrations of 3×1015, 8×1014 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eafbb3a47c5554335e5dd8bf8b50da6
https://doi.org/10.4028/www.scientific.net/msf.556-557.873
https://doi.org/10.4028/www.scientific.net/msf.556-557.873
Autor:
A.J. Hydes, Alton B. Horsfall, Nicholas G. Wright, Konstantin Vassilevski, Michael J. Uren, A.G. Munday, CM Johnson, Praneet Bhatnagar, K.P. Hilton
Publikováno v:
Materials Science Forum. :799-802
4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 %
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a15a8351aa9a294f528420a39cf84ac
https://doi.org/10.4028/www.scientific.net/msf.556-557.799
https://doi.org/10.4028/www.scientific.net/msf.556-557.799
Autor:
Pallav Bhatnagar, K.P. Hilton, Alton B. Horsfall, A.G. Munday, Nicholas G. Wright, Michael J. Uren, CM Johnson, A.J. Hydes
Publikováno v:
Materials Science Forum. :987-990
Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8be9c45551d7ed3f10c2841a7e5d539
https://doi.org/10.4028/www.scientific.net/msf.556-557.987
https://doi.org/10.4028/www.scientific.net/msf.556-557.987
Autor:
Martin Kuball, K.P. Hilton, James W Pomeroy, Michael J. Uren, Trevor Martin, David J. Wallis, Gernot Riedel, Andrei Sarua
Publikováno v:
physica status solidi (a). 204:2014-2018
A novel time-resolved micro-Raman thermography technique has been developed to measure the active region temperature in AlGaN/GaN electronic devices, achieving a temporal and spatial resolution of 200 ns and 0.5-0.7 μm, respectively. AlGaN/GaN heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::593afaa9aefde1d734f684437aa761fe
https://doi.org/10.1002/pssa.200674717
https://doi.org/10.1002/pssa.200674717
Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy
Autor:
Trevor P. Martin, Michael J. Uren, Gernot Riedel, James W Pomeroy, J.O. Maclean, Martin Kuball, K.P. Hilton, Andrei Sarua, David J. Wallis
Publikováno v:
IEEE Electron Device Letters. 28:86-89
We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a050c66e829593684ca7c22e0fdd20
https://doi.org/10.1109/led.2006.889215
https://doi.org/10.1109/led.2006.889215
Autor:
Martin Kuball, Andrei Sarua, David J. Wallis, Michael J. Uren, Trevor Martin, K.P. Hilton, Hangfeng Ji
Publikováno v:
IEEE Transactions on Electron Devices. 54:3152-3158
The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography. The temperature distribution in operating AlGaN/GaN devices on SiC, sapphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c999446a75f509ad105eeca2d68f0e3
https://doi.org/10.1109/ted.2007.908874
https://doi.org/10.1109/ted.2007.908874
Autor:
Konstantin Vassilevski, Irina P. Nikitina, A.G. Munday, CM Johnson, Anthony O'Neill, A.J. Hydes, Praneet Bhatnagar, K.P. Hilton, Michael J. Uren, Alton B. Horsfall, Nicholas A. Wright
Publikováno v:
Materials Science Forum. :931-934
4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da857ef267094c30e412906211c0fe90
https://doi.org/10.4028/www.scientific.net/msf.527-529.931
https://doi.org/10.4028/www.scientific.net/msf.527-529.931
Autor:
Andrei Sarua, Trevor Martin, K.P. Hilton, Hangfeng Ji, R.S. Balmer, Martin Kuball, Michael J. Uren
Publikováno v:
IEEE Transactions on Electron Devices. 53:2438-2447
Self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature maps of powered devices. Micro-Raman spectroscopy was used to obtain high-spatial-reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7179fd2c403a46e3f6966acd00cba22a
https://doi.org/10.1109/ted.2006.882274
https://doi.org/10.1109/ted.2006.882274