Zobrazeno 1 - 10
of 689
pro vyhledávání: '"K.N. Tu"'
Publikováno v:
Journal of Materials Research and Technology, Vol 31, Iss , Pp 3374-3382 (2024)
Due to the demand for high-performance electronic products, there has been a rapid development in three-dimensional integrated circuit (3D IC) packaging technology. The 3D stacking relies on microbumps and through silicon vias (TSVs) to connect multi
Externí odkaz:
https://doaj.org/article/0aa432c6a5bc4e4a9c5df595a412c148
Publikováno v:
Journal of Materials Research and Technology, Vol 28, Iss , Pp 3573-3582 (2024)
Ball Grid Array (BGA) packaging method has been widely used in microelectronic devices, and electromigration (EM) in BGA is a crucial reliability issue, determining the performance of the products. Herein, we report a new failure mode induced by a co
Externí odkaz:
https://doaj.org/article/db642bd86e2a4ad49d06aeea2485cb68
Publikováno v:
Case Studies in Thermal Engineering, Vol 58, Iss , Pp 104403- (2024)
High-temperature pipelines are susceptible to defects due to the long-term service in high-temperature environments. The guided wave technology is promising for online non-destructive testing. Before implementing it in engineering, it is essential to
Externí odkaz:
https://doaj.org/article/5b4117c72f1947f49fe0ca1c4c0e1605
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 7910-7924 (2023)
We report here an approach to inhibit Cu–Sn intermetallic compounds (IMCs) in flip chip solder joints under thermal-gradient annealing. We reflowed two types of solders joints, Cu/SnAg/Cu and Cu/SnAg/Ni, in an oven (isothermal) and on a hot plate (
Externí odkaz:
https://doaj.org/article/8e8bd25c35254526a429bee07f4c10d0
Publikováno v:
Journal of Materials Research and Technology, Vol 20, Iss , Pp 2799-2808 (2022)
We investigated the lattice strain of nano-twinned Cu (nt-Cu) and regular Cu redistribution lines (RDLs) at 215, 300, 375 and 434 K using x-ray nanodiffraction; this technique has spatial resolution 100 nm. We found that the largest thermal strain or
Externí odkaz:
https://doaj.org/article/36a720e50c294fbd932860c4b71567cd
Publikováno v:
Journal of Materials Research and Technology, Vol 18, Iss , Pp 859-871 (2022)
Highly (111)-oriented nanotwinned copper (nt-Cu) and non-conductive paste (NCP) were employed to fabricate hybrid Cu–Cu bonding. We tailored and correlated the fracture modes, bonding strengths, and microstructures of the joints. A non-flow underfi
Externí odkaz:
https://doaj.org/article/8e4a3a390fe34b1b9e4d02bde79b9b44
Publikováno v:
Journal of Materials Research and Technology, Vol 15, Iss , Pp 2332-2344 (2021)
A surface creep model is presented for analyzing Cu-to-Cu direct bonding under thermal compression. The driving force is a pressure gradient, which squeezes layers of atoms to fill voids at the bonding interface. The link among the key parameters of
Externí odkaz:
https://doaj.org/article/f4980e1a811142d8901250b281775b2e
Publikováno v:
Materials & Design, Vol 224, Iss , Pp 111318- (2022)
With downward scaling of the micro-bumps in three-dimensional integrated circuits, surface inter-diffusion becomes dominant, changing the kinetic path of intermetallic compounds (IMC) formation and causing serious reliability issues. However, an in-d
Externí odkaz:
https://doaj.org/article/e0df033aee80494ebd0b0dacb06f67c9
Publikováno v:
Journal of Materials Research and Technology, Vol 14, Iss , Pp 719-730 (2021)
In 3D IC integration, a critical demand of interfacial joints in high-end devices is ultra-fine pitch, below 2 μm. The pitch cannot be fabricated by using solder joints because of its low melting point. Microelectronic industry prefers a solid state
Externí odkaz:
https://doaj.org/article/68c4d8f23895405b8a30681c221ffe39
Autor:
I-Hsin Tseng, Po-Ning Hsu, Wei-You Hsu, Dinh-Phuc Tran, Benson Tsu-Hung Lin, Chia-Cheng Chang, K.N. Tu, Chih Chen
Publikováno v:
Results in Physics, Vol 31, Iss , Pp 105048- (2021)
Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure
Externí odkaz:
https://doaj.org/article/6d99f61ff02c41d1a3324aeeba488ef9