Zobrazeno 1 - 10
of 85
pro vyhledávání: '"K.M. Strohm"'
Publikováno v:
European Radar Conference, 2005. EURAD 2005..
First cars equipped with 24 GHz short range radar (SRR) systems in combination with 77 GHz long range radar (LRR) system enter the market in autumn 2005 enabling new safety and comfort functions. In Europe the 24 GHz ultra wideband (UWB) frequency ba
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Autor:
J. Gerdes, K.M. Strohm, C.N. Rheinfelder, J.F. Luy, F. Beisswanger, W. Heinrich, F.J. Schmuckle
Publikováno v:
IEEE Microwave and Guided Wave Letters. 6:398-400
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a conversion (dc to rf) efficiency of 6% is measured.
Autor:
S. Mohammadi, null Zhenqiang Ma, null Jaehoon Park, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K.M. Strohm, J.-F. Luy
Publikováno v:
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).
Publikováno v:
IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers..
Two silicon monolithic circuits, a 90-GHz-band monolithic integrated Schottky diode receiver fabricated on a highly insulating silicon substrate, and a planar W-band oscillator, hybrid integrated on a highly insulating silicon substrate with double d
Autor:
Liang-Hung Lu, Zhenqiang Ma, Linda P. B. Katehi, Samuel A. Alterovitz, P. Bhattacharya, J.-F. Luy, Saeed Mohammadi, George E. Ponchak, K.M. Strohm
Publikováno v:
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
Multi-finger SiGe HBT's have been fabricated using a novel fully self-aligned double-mesa technology. With the advanced process technology, a maximum oscillating frequency (f/sub max/) of 78 GHz and a cut-off frequency (f/sub T/) of 37 GHz were demon
Publikováno v:
2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397).
The application of Si-SiGe HBTs in active integrated K-band antennas on high resistivity silicon substrates is presented. The antenna consists of microstrip structures representing the resonating and radiating circuits and a transistor mounted on the
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:366-368
A subharmonically pumped finline mixer applying a silicon planar doped barrier diode has been developed for D-band frequencies. Diode processing and DC characteristics are discussed, and a circuit description is given. Excellent mixing properties (mi
Autor:
K.M. Strohm, J.-F. Luy, P. K. Bhattacharya, George E. Ponchak, Zhenqiang Ma, Linda P. B. Katehi, Saeed Mohammadi, Samuel A. Alterovitz
Publikováno v:
Electronics Letters. 37:1140
Large-area multifinger Si/sub 0.7/Ge/sub 0.3//Si heterojunction bipolar transistors for high-power and high-frequency operation have been designed, fabricated and characterised. For a nine-emitter finger device, an f/sub max/ of 100 GHz was achieved
Publikováno v:
Microwave and Optical Technology Letters. 1:117-119
Planar IMPATT diodes have been fabricated for W-band operation on high-resistivity silicon substrates. The active layers are grown by silicon molecular beam epitaxy. The diodes are monolithically integrated in a coplanar disc resonator. Good DC chara