Zobrazeno 1 - 10
of 75
pro vyhledávání: '"K.M. Molvar"'
Autor:
Brian Tyrrell, Joseph P. Donnelly, K.M. Molvar, K. A. McIntosh, J.E. Funk, Brian F. Aull, J.M. Mahan, Simon Verghese, Frederick J. O'Donnell, Jonathan Frechette, Douglas C. Oakley, Matthew J. Renzi, Zong Long Liau, E.J. Ouellette, Christopher J. Vineis, David Chapman, L.J. Mahoney, E.K. Duerr, P.I. Hopman, G.M. Smith, Katharine Jensen, J. B. Glettler, J.C. Aversa, D. C. Shaver
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:870-886
Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 mum wavelength s
Autor:
K.M. Molvar, Eric A. Dauler, K. A. McIntosh, Simon Verghese, G.M. Smith, Katharine Jensen, L.J. Mahoney, Joseph P. Donnelly, E.K. Duerr, Christopher J. Vineis, Douglas C. Oakley, D. C. Shaver, P.I. Hopman, Steven H. Groves
Publikováno v:
IEEE Journal of Quantum Electronics. 42:797-809
For Geiger-mode avalanche photodiodes, the two most important performance metrics for most applications are dark count rate (DCR) and photon detection efficiency (PDE). In 1.06-mum separate-absorber-avalanche (multiplier) InP-based devices, the prima
Autor:
Horst Stormer, Michael J. Manfra, L.J. Mahoney, Wei Pan, K.M. Molvar, D. V. Lang, L. N. Pfeiffer, Ken W. West, Sheyum Syed, Richard J. Molnar, Julia W. P. Hsu, Glen R. Kowach, Nils Weimann, S. N. G. Chu, A. M. Sergent, J. Caissie
Publikováno v:
Journal of Applied Physics. 92:338-345
We report on an extensive study of the growth and transport properties of the two-dimensional electron gas (2DEG) confined at the interface of AlGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) on thick, semi-insulating GaN templates pr
Autor:
K. A. McIntosh, I. Melngailis, L.J. Mahoney, K.M. Molvar, Simon Verghese, E.K. Duerr, R.L. Aggarwal, Richard J. Molnar, Michael W. Geis
Publikováno v:
IEEE Transactions on Electron Devices. 48:502-511
For solar-blind ultraviolet detection, AlGaN avalanche photodiodes (APDs) that operate in Geiger mode can outperform conventional AlGaN photodiodes in sensitivity and should compare favorably to photomultiplier tubes. Toward this goal, we report GaN
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, J.P. Sage, T.C.L.G. Sollner, P.A. Maki, C. D. Parker, S.D. Calawa, K.M. Molvar
Publikováno v:
Solid-State Electronics. 44:1853-1856
Monolithic resonant-tunneling-diode (RTD) relaxation oscillators are fabricated. The highest repetition rate of this pulse generator is 6.7 GHz with a pulse width of approximately 60 ps. Oscillators with an RTD connected to an off-chip transmission l
Autor:
Chang-Lee Chen, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner, R. H. Mathews, L.J. Mahoney, K.M. Molvar
Publikováno v:
Proceedings of the IEEE. 87:596-605
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The des
Autor:
A. Napoleone, Steven H. Groves, L.J. Mahoney, E.K. Duerr, S.D. Calawa, Douglas C. Oakley, D. C. Shaver, K.M. Molvar, Joseph P. Donnelly, K. A. McIntosh
Publikováno v:
Applied Physics Letters. 81:2505-2507
Geiger-mode (photon-counting) operation at 1.06 μm has been demonstrated with InGaAsP/InP avalanche photodiodes operated at room temperature. A photon detection efficiency of 33% was measured on uncoated detectors, representing an internal avalanche
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:846-850
A semiconfocal open-cavity resonator has been used to stabilize a resonant-tunneling-diode waveguide oscillator at frequencies near 100 GHz. The high quality factor of the open cavity resulted in a linewidth of approximately 10 kHz at 10 dB the peak,
Publikováno v:
Applied Physics Letters. 76:3938-3940
Photon counting, utilizing Geiger-mode avalanche response, has been demonstrated at 300 K in avalanche photodiodes fabricated in GaN grown by hydride vapor-phase epitaxy. Measurements have been made using both passive-quench and time-gated modes of o
Autor:
S. S. Choi, I. Melngailis, William D. Goodhue, D. L. Spears, K.M. Molvar, Richard J. Molnar, Michael W. Geis, K. A. McIntosh, A. Lightfoot, Simon Verghese, L.J. Mahoney, R. L. Aggarwal
Publikováno v:
Applied Physics Letters. 75:3485-3487
Avalanche photodiodes have been demonstrated utilizing GaN grown by hydride vapor-phase epitaxy. Spatially uniform gain regions were achieved in devices fabricated on low-defect-density GaN layers that exhibit no microplasma behavior. A uniform multi