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Autor:
K.M. Horn, Mark B. H. Breese
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1349-1354
High resolution, calibrated ion beam induced charge (IBIC) measurements from integrated circuit test structures have demonstrated that the measured charge collection in a device can exhibit significant change after only a few hundred ions/μm 2 expos
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 130:470-477
Optically targeted, ion microbeams provide a useful means of exposing individual structures within an integrated circuit to ionizing radiation. With this tool, calibrated, low damage, charge collection spectra can be measured from specific circuit st
Publikováno v:
Materials Science Forum. :427-432
The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-depende
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:606-617
Medical radiotherapy has traditionally relied upon the use of external photon beams and internally implanted radioisotopes as the chief means of irradiating tumors. However, advances in accelerator technology and the exploitation of novel means of pr
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1940-1947
The effect of displacement and ionizing dose damage on ion-beam-induced-charge-collection (IBICC) and single-event-upset (SEU) imaging are explored. IBICC imaging is not affected by ionizing dose damage, and its dependence on displacement damage is a
Autor:
Barney Lee Doyle, Mark B. H. Breese, H. Schöne, F.W. Sexton, Jamie S. Laird, G.J.F. Legge, K.M. Horn, A. Saint
Publikováno v:
Journal of Applied Physics. 77:3734-3741
The conditions necessary for obtaining both the maximum topographical image contrast and the maximum insensitivity to ion induced damage using ion‐beam induced charge microscopy are presented and interpreted in terms of existing energy loss and dam
Publikováno v:
Journal of Applied Physics. 77:2351-2357
Low‐energy ion bombardment of the Ge(001)‐(2×1) surface produces surface point defects, which are detected and quantified using in situ reflection high‐energy electron diffraction. Surface defect production rates are determined for a range of
Publikováno v:
Surface Science. 320:174-184
The interaction of molecular oxygen with the Ge(001) surface is studied in terms of the immediate disordering effects which occur as oxygen impinges on the germanium surface. Using reflection high energy electron diffraction, the surface morphology o