Zobrazeno 1 - 10
of 71
pro vyhledávání: '"K.L.I. Kobayashi"'
Autor:
K.L.I. Kobayashi, H. Kawamura, Shuzo Takano, Sadakichi Hotta, Kiichi Komatsubara, Yoshiki Kato
Publikováno v:
Journal of the Physical Society of Japan. 37:1007-1015
From magnetoplasma experiments at 50 GHz for n -Pb 1- x Sn x Te (0≤ x < 0.3), a static dielectric constant e s is determined as a function of x . For x =0, 0.063, 0.091, 0.152 and 0.293, e s is found to be 1410, 1770, 2840, 4610 and 10800 at 1.6 K,
Autor:
K.L.I. Kobayashi, Shigeru Semura, Tadashi Fukuzawa, H. Saito, Yoko Uchida, Hisao Nakashima, Takao Kuroda, T. Ohta
Publikováno v:
IEEE Journal of Quantum Electronics. 21:629-633
A new transverse mode controlled buried-multiquantum-well (BMQW) laser has been fabricated using the simple and reliable Zn-diffusion-induced disordering process. BMQW lasers are characterized by low threshold current (20 mA) and single transverse an
Publikováno v:
Solid State Communications. 35:179-182
Combined measurements of electron excited N 4,5 Auger spectra and photoelectron emission on clean and oxidized Gd lead to a distinction between Auger lines originating from 4 d → continuum and 4 d → 4ƒ resonance excitations. Several Auger struct
Publikováno v:
Progress in Crystal Growth and Characterization. 1:117-149
Publikováno v:
Le Journal de Physique Colloques. 40:C2-596
A phase transition at 22 K was observed in p-type single crystal of SnTe by Mossbauer spectroscopy and electrical resistivity. At this temperature the recoilless fraction versus temperature curve shows a dip and the resistivity also shows a slight ju
Publikováno v:
Journal of the Physical Society of Japan. 53:2130-2136
Valence band photoemission spectra of six kinds of Ni x Si ( x =3, 2.5, 2, 1.5, 1, and 0.5) were measured with synchrotron radiation at photon energies around the Ni 3p core excitation threshold. The resonance in the Ni 3d band shows two minimum stru
Publikováno v:
Solid State Communications. 17:875-878
The effect of displacive phase transition on electrical transport properties is investigated in a p -type single crystal of SnTe with carrier concentration of 1.2 × 10 20 /cm 3 at 77 K. The resistivity vs temperature curve shows an anomalous increas
Autor:
Toshikazu Shimada, Chang-gen Jiang, Tsuyoshi Uda, Yoshitada Murata, K.L.I. Kobayashi, Hiroshi Daimon, Yoshifumi Katayama
Publikováno v:
Journal of Non-Crystalline Solids. :561-564
A systematic study is made of the valence band structure of a-Si x C 1−x :H by in situ photoelectron spectroscopy using synchrotron radiation and the nonlocal pseudopotential method for supercell configuration model.
Publikováno v:
Solid State Communications. 39:851-855
Photoemission, Auger electron yield, and Auger electron spectra are observed for Al/Si(111)-cleaved interfaces. The Al 3 p derived state which becomes metallic at monolayer coverage is introduced near the top of the valence band. The Fermi level is s
Publikováno v:
Solid State Communications. 30:77-80
Hall coefficient RH and resistivity ϱ for Pb0.56Sn0.44Te crystal were measured as a function of temperature and pressure in the region of the ferroelectric phase transition. It enabled to obtain the pressure dependence of the phase transition temper