Zobrazeno 1 - 10
of 31
pro vyhledávání: '"K.J. Hass"'
Publikováno v:
IEEE Transactions on Magnetics. 42:2751-2753
The radiation environment of space presents a significant threat to the reliability of nonvolatile memory technologies. Ionizing radiation disturbs the charge stored on floating gates, and cosmic rays can permanently damage thin oxides. A new memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92c6c9e12d07b97a9a47c35d4f31dfd
https://doi.org/10.1109/tmag.2006.879738
https://doi.org/10.1109/tmag.2006.879738
Autor:
K.J. Hass, Q.F. Xiao, J. Jabal, Gregory W. Donohoe, Byoung-Chul Choi, S. H. Gee, H. Han, Y. K. Hong
Publikováno v:
IEEE Transactions on Magnetics. 42:3216-3218
Nonequilibrium magnetization configuration and magnetic switching behavior are studied using micromagnetic modeling. In particular, it is found that coherent rotation and magnetization ringing in submicrometer Ni80Fe20 elements can be controlled by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d93262a039a06e2aa9f96905baa64d30
https://doi.org/10.1109/tmag.2006.880105
https://doi.org/10.1109/tmag.2006.880105
Autor:
R.K. Treece, T.F. Wunsch, G.L. Hash, F.W. Sexton, C. L. Axness, K.J. Hass, Marty R. Shaneyfelt, K.L. Hughes, W. T. Corbett
Publikováno v:
IEEE Transactions on Nuclear Science. 38:1521-1528
The SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm/sup 2//mg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499bca84f386e98db77a80ee8721c568
https://doi.org/10.1109/23.124141
https://doi.org/10.1109/23.124141
Autor:
K.L. Hughes, G.L. Hash, R.K. Treece, K.J. Hass, K. L. Kang, F.W. Sexton, C. L. Axness, S.P. Buchner
Publikováno v:
IEEE Transactions on Nuclear Science. 37:1861-1868
A detailed characterization is presented of the single-event upset (SEU) sensitivity of the SA3300 microprocessor focusing specifically on the internal general-purpose registers. SEU response is explored as a function of temperature and logic state o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a3a806c796a7d99096306fb15c6c47
https://doi.org/10.1109/23.101202
https://doi.org/10.1109/23.101202
Publikováno v:
2007 IEEE Aerospace Conference.
The Field Programmable Processor Array (FPPA) is a reconfigurable processor chip developed for NASA for high-throughput, low-power on-board processing of streaming data. The FPPA implements a synchronous dataflow computational model, with 16 on-board
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61661b9eae7539f90b6371c394d03c4
https://doi.org/10.1109/aero.2007.353105
https://doi.org/10.1109/aero.2007.353105
Publikováno v:
2007 IEEE Aerospace Conference.
This paper describes a new nonvolatile memory technology being developed for embedded computing. Based on a magnetic tunneling junction (MTJ) cell, these devices will be integrated into a radiation-hard SOI CMOS process, to replace conventional flip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c3f25a70989ec46ab2275f22642aaf2
https://doi.org/10.1109/aero.2007.353103
https://doi.org/10.1109/aero.2007.353103
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
A non-volatile latch for the space radiation environment using magnetic tunneling junctions (MTJ) is proposed. This non-volatile radiation-tolerant latch can be embedded in processing logic. Data is stored with magnetic fields, and differential sensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc29c03893266f6f8b6356ea5eda98d
https://doi.org/10.1109/intmag.2006.376463
https://doi.org/10.1109/intmag.2006.376463
Publikováno v:
2006 7th Annual Non-Volatile Memory Technology Symposium.
We propose a new shadow RAM circuit, utilizing magnetic tunnel junctions and an independent-double-gate CMOS technology. A shadow RAM combines a conventional static RAM circuit with a non-volatile "shadow", and provides a means to quickly transfer da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57db54961245454ee57153a40215a085
https://doi.org/10.1109/nvmt.2006.378874
https://doi.org/10.1109/nvmt.2006.378874
Publikováno v:
Proceedings, IEEE Aerospace Conference.
The combination of two synergistic VLSI technologies, ultra low power CMOS and radiation tolerant by design, offers an opportunity to provide advanced electronics capabilities for future spacecraft. The 500 mV CMOS process can yield orders of magnitu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed29da22a524c5ce765885e4e1c71229
https://doi.org/10.1109/aero.2002.1035413
https://doi.org/10.1109/aero.2002.1035413
Autor:
J.W. Ambles, K.J. Hass
Publikováno v:
42nd Midwest Symposium on Circuits and Systems (Cat. No.99CH36356).
Single event transients (SET) occur when an energetic subatomic particle strikes a combinational logic element. The charge deposited by the particle causes a transient voltage disturbance, which can propagate to a storage element and be latched, resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8251c75d328e07d1b2dccd3e810b7d42
https://doi.org/10.1109/mwscas.1999.867224
https://doi.org/10.1109/mwscas.1999.867224