Zobrazeno 1 - 3
of 3
pro vyhledávání: '"K.J Reeson Kirkby"'
Autor:
K.J Reeson Kirkby, Russell M. Gwilliam, Guosheng Shao, Kevin P. Homewood, J.S Sharpe, M. J. Goringe, Yanmei Chen
Publikováno v:
Journal of Materials Science. 36:321-327
A p-type device grade silicon wafer was implanted by 1 MeV Ru+ ions to a dose of 5.67 × 1016 cm−2. The microstructures of the as-implanted and annealed samples were studied mainly by analytical transmission electron microscopy (TEM) and X-ray diff
Autor:
J.S Sharpe, M. A. Lourenço, T.M Butler, Russell M. Gwilliam, Yanmei Chen, K.J Reeson Kirkby, C.N McKinty, S. Ledain, Guosheng Shao, A.K Kewell, Kevin P. Homewood
Publikováno v:
Scopus-Elsevier
Ru2Si3 has been shown both theoretically and experimentally to be a direct gap semiconductor. In this paper we report the fabrication of orthorhombic Ru2Si3 by Ion Beam Synthesis (high dose ion implantation followed by high temperature anneal). This
Autor:
J.S Sharpe, K.J Reeson Kirkby, C.N McKinty, John Colligon, M. A. Lourenço, T.M Butler, R. Valizadeh, A.K Kewell, Kevin P. Homewood
Publikováno v:
Scopus-Elsevier
University of Manchester-PURE
University of Manchester-PURE
β-FeSi2 has been shown to have a minimum direct band gap of 0.87 eV [T.D. Hunt, K.J. Reeson, K.P. Homewood, S.W. Teon, R.M. Gwilliam, B.J. Sealy, Nucl. Instr. and Meth. B 84 (1994) 168–171] which leads to the opportunity for Si based opto-electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6343e0ec8d028bc95d179627150677ca
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033900718&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033900718&partnerID=MN8TOARS