Zobrazeno 1 - 10
of 11
pro vyhledávání: '"K.I. Lundstrom"'
Publikováno v:
Journal of Applied Physics. 46:3876-3881
An n‐channel MOS transistor with palladium gate was fabricated. The threshold voltage of this transistor was found to depend on the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C, 10 ppm hydrogen in air i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::752c9246dce07bc99093db34f6503663
https://doi.org/10.1063/1.322185
https://doi.org/10.1063/1.322185
Autor:
Christer Svensson, K.I. Lundstrom
Publikováno v:
IEEE Transactions on Electron Devices. 19:826-836
The properties of thin oxide MNOS structures are studied. An analytical theory for the switching time constant is derived and curves of the switching time constant versus the nitride field are computed. These curves are useful in the design of MNOS-m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5c7fe27702be22d74c8f6ff7e566e35
https://doi.org/10.1109/t-ed.1972.17500
https://doi.org/10.1109/t-ed.1972.17500
Autor:
K.I. Lundstrom, G.H.B. Hansson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 20:641-645
Stability criteria for negative conductance oscillators or amplifiers are derived in terms of the total circuit admittance. A figure of merit for phase locking at small injected powers is derived. The influence of large injected signals is studied. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::934c59c7dca6771033e701bc989c6f5e
https://doi.org/10.1109/tmtt.1972.1127837
https://doi.org/10.1109/tmtt.1972.1127837
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 21:28-34
Basic properties of subharmonic injection locking, as well as differences between subharmonic and fundamental injection locking, are studied with the describing function technique. The consequences of including a nonlinear capacitance as well as line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0afbfc56c2141154476838b11d9d161b
https://doi.org/10.1109/tmtt.1973.1127910
https://doi.org/10.1109/tmtt.1973.1127910
Autor:
M. Bakowski, K.I. Lundstrom
Publikováno v:
IEEE Transactions on Electron Devices. 20:550-563
The design of high-voltage p-n-junction devices used today is usually based on beveling of the p-n junctions in order to reduce the tangential surface field far enough below the bulk field and to secure thus that breakdown occurs in the bulk of the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523bad36fcc51fa8e7ae507b0745147f
https://doi.org/10.1109/t-ed.1973.17697
https://doi.org/10.1109/t-ed.1973.17697
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 20:402-409
It is shown that a nonlinear microwave circuit can easily be represented by a feedback model. This formalistic identity with nonlinear control systems suggests that methods and results can be borrowed from nonlinear control theory. The describing fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878687c797cf7f7d184a38c2d417b28a
https://doi.org/10.1109/tmtt.1972.1127770
https://doi.org/10.1109/tmtt.1972.1127770
Autor:
D.H. Steinbrecher, G.H.B. Hansson, M. Suzuki, Chao-Chun Chen, D.A. Fleri, K. Nagai, L.D. Cohen, A.-M.A. El-Sherbiny, L. Gustafsson, C.K. Mok, D.F. Peterson, K.I. Lundstrom, W.J. Getsinger, Y. Aoki
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 21:64-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4db83df56f7f4dcdf1e06b842d2ffa2
https://doi.org/10.1109/tmtt.1973.1127921
https://doi.org/10.1109/tmtt.1973.1127921
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 21:353-355
A simple rule is presented for the determination of the locking region of an oscillator with a general tuning circuit.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fcebb6d00dcb0a2f4920bf990d2e82d
https://doi.org/10.1109/tmtt.1973.1127995
https://doi.org/10.1109/tmtt.1973.1127995
Autor:
B. Schiek, J.L. Allen, K. Schunemann, K.I. Lundstrom, D.J. Richards, N.A. McDonald, A. Sene, F.J. Rosenbamn, A. Wexler, R.H.T. Bates, D.G. Corr, M.K. Krage, M.F. Estes, Fook Loy Ng, G.H.B. Hansson, George I. Haddad, J.B. Davies
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 20:710-712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ae2721becce88dd8f67513f6f8457e
https://doi.org/10.1109/tmtt.1972.1127854
https://doi.org/10.1109/tmtt.1972.1127854
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