Zobrazeno 1 - 10
of 98
pro vyhledávání: '"K.H. Bachem"'
Publikováno v:
Physical Review B. 60:11601-11610
Near infrared Brillouin scattering and high resolution x-ray diffraction is used for a precise determination of the elastic constants and the relaxed lattice parameters of ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ epitaxial layer
Publikováno v:
Materials Science and Engineering: B. 59:202-206
The preparation of gallium nitride films by deposition from the vapour phase (MOCVD, MBE) may suffer from an occurrence of multiple orientations and a mixture of the wurtzite (2H) and the sphalerite (3C) polytype if nucleation and deposition conditio
Autor:
D. Behr, N. Herres, H. Obloh, Joachim Wagner, M. Maier, Michael Kunzer, K.H. Bachem, A. Ramakrishnan
Publikováno v:
Scopus-Elsevier
We report on the composition dependence of the band gap energy of strained hexagonal InxGa1−xN layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by se
Publikováno v:
Journal of Crystal Growth. 164:396-401
Incomplete decomposition of trimethylgallium (TMGa) during growth of GaAs(001) at low temperatures by metalorganic molecular beam epitaxy (MOMBE) results in the incorporation of (H(C As ) 2 ) complexes that give a vibrational infrared absorption l
Publikováno v:
Physical Review B. 51:4150-4158
The frequencies of the localized vibrational modes of H-${\mathrm{C}}_{\mathrm{As}}$ pairs in GaAs epitaxial layers have been measured using Raman spectroscopy for all four isotopic combinations involving $^{12}\mathrm{C}$, $^{13}\mathrm{C}$, H, and
Publikováno v:
IEEE Transactions on Electron Devices. 39:753-756
GaAs bipolar transistors with a 50-AA-thick lattice matched Ga/sub 0.5/In/sub 0.5/P layer between the emitter and base acting as a hole repelling potential barrier in the valence band were fabricated from films grown by metalorganic vapor phase epita
Publikováno v:
Semiconductor Science and Technology. 7:A27-A31
Low-temperature photoluminescence topography has been used to monitor local variations in composition of In1-yGayP and AlxGa1-xAs layers which were grown lattice-matched on semi-insulating LEC GaAs substrates by MOCVD. Whereas the in content varies b
Publikováno v:
Applied Physics Letters. 74:1951-1953
We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1−xInxAs/GaAs1−ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using
Publikováno v:
Applied Physics Letters. 74:410-412
Metastable GaAs1−ySby with 0.22
Publikováno v:
Superlattices and Microstructures. 8:179-182
We report on optical and electrical properties of GaAs/AlGaAs heterostructures prepared by molecular beam epitaxy (MBE). For fixed Ga and As fluxes the damping of the oscillations of the reflection high energy electron diffraction (RHEED) pattern is