Zobrazeno 1 - 10
of 70
pro vyhledávání: '"K.F. Brown-Goebeler"'
Publikováno v:
Journal of Lightwave Technology. 10:1926-1930
A polarization-independent quantum well waveguide switch is demonstrated. By altering the composition and hence the degree of built-in strain, the bandgap of In/sub 1-x/Ga/sub x/As/InP quantum wells is engineered to produce equal field-induced refrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ee3c7b7b48f0ff3b78039549b0f114
https://doi.org/10.1109/50.202825
https://doi.org/10.1109/50.202825
Publikováno v:
Journal of Lightwave Technology. 10:924-932
Details on the design, fabrication and properties of the first interferometric intensity modulators with monolithically integrated optical gain are presented. These guided-wave devices make use of two sets of InP-based quantum well heterostructures t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5677e213255eb808825fd825074f91
https://doi.org/10.1109/50.144915
https://doi.org/10.1109/50.144915
Autor:
N.J. Sauer, K.F. Brown-Goebeler, Daniel S. Chemla, B. Tell, Tallis Y. Chang, K.L. Jones, Martin Wegener, J.E. Zucker
Publikováno v:
Journal of Crystal Growth. 111:475-478
The wide range of conduction-band discontinuity available in the GaInAs/AlGaInAs/AlInAs material system has enabled us to demonstrate high sensitivity, high speed optical modulators and switches based on the band filling effect in the novel blockaded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f96a6ec7894b2124889104d0d22cfc
https://doi.org/10.1016/0022-0248(91)91023-4
https://doi.org/10.1016/0022-0248(91)91023-4
Autor:
Miroslav Micovic, P.A. Evaldsson, P.R. Claisse, A. Lepore, P.A. Kiely, K.F. Brown-Goebeler, Geoffrey W. Taylor, Roger J. Malik, F.G. Storz, T. Vang, D.P. Docter
Publikováno v:
Electronics Letters. 30:529-531
The scaling to 0.5 µm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm = 205 mS/mm and VTH = –0.34 V have been obtained for 0.5 × 100 µm2 devices. For shorter gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::599706e55e6765c11d7bb9f779c09afa
https://doi.org/10.1049/el:19940354
https://doi.org/10.1049/el:19940354
Autor:
J. E. Cunningham, Gabriela Livescu, Ursula Keller, W. Y. Jan, B. Tell, K.F. Brown-Goebeler, G. R. Jacobovitz-Veselka
Publikováno v:
Applied Physics Letters. 62:3085-3087
We systematically studied microcavity enhancement and mode‐coupling effects in photo‐ and electroluminescence of an AlGaAs/GaAs vertical‐cavity light‐emitting diode (LED) by continuously changing the microcavity resonance with respect to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c545e77d8e735950cdcb5542e26baa44
https://doi.org/10.1063/1.109143
https://doi.org/10.1063/1.109143
Publikováno v:
IEEE Photonics Technology Letters. 5:637-639
Low-temperature continuous operation of vertical-cavity surface-emitting lasers with wavelength below 700 nm is discussed. For heat sink temperatures below -25 degrees C, threshold currents less than 4 mA and optical power of several milliwatts are o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58aa789f317758891d5291715897d0d5
https://doi.org/10.1109/68.219694
https://doi.org/10.1109/68.219694
Autor:
G. Raybon, Thomas L. Koch, Charles A. Burrus, M. D. Chien, M.G. Young, Uziel Koren, Barry Miller, K.F. Brown-Goebeler, B. Tell, Michael A. Newkirk
Publikováno v:
IEEE Photonics Technology Letters. 4:1258-1260
A 1.5- mu m multiquantum well amplifier divided into three sections with short contacts at the input and output facets is described. A simple derivation shows that the amplifier optical gain is proportional to the ratio of voltage changes at the face
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::194d4ab2d229cac32611ebd08cc9c105
https://doi.org/10.1109/68.166961
https://doi.org/10.1109/68.166961
Autor:
J.E. Zucker, B. Tell, Barry Miller, K.F. Brown-Goebeler, M.G. Young, M. D. Divino, K.L. Jones, Charles H. Joyner
Publikováno v:
Applied Physics Letters. 60:3036-3038
We demonstrate that phosphorous ion implantation in InGaAs/InP quantum wells can be used to produce large (from 1550 to 1200 nm) blueshifts of the band edge. This reproducible technique of lateral band‐gap control can be used in quantum‐well phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b432baaeff416060f3a5e357abf9801
https://doi.org/10.1063/1.106775
https://doi.org/10.1063/1.106775
Autor:
Uziel Koren, M.G. Young, Herman M. Presby, B. Tell, J. D. Evankow, C. A. Burrus, C. R. Giles, G. Raybon, Robert M. Jopson, Barry Miller, K.F. Brown-Goebeler, M. Chien
Publikováno v:
Applied Physics Letters. 59:2351-2353
We demonstrate a laser amplifier photonic integrated circuit having 370‐mW cw output power emitted in a single transverse mode a 1.48 μm wavelength, suitable for pumping erbium‐doped fiber amplifiers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d7156ab82bf9f014855c57c7c63374
https://doi.org/10.1063/1.106063
https://doi.org/10.1063/1.106063
Autor:
B. Tell, C. A. Burrus, P. Cooke, T. Vang, S. K. Sargood, K.F. Brown-Goebeler, Geoffrey W. Taylor
Publikováno v:
Applied Physics Letters. 59:1987-1989
The single quantum well heterojunction field‐effect photodetector is demonstrated for the first time as a GHz bandwidth waveguide heterostructure, and as the optoelectronic counterpart to the single quantum well heterojunction field‐effect transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b86e8b0a0edace0cb5314c3f04ae3aa
https://doi.org/10.1063/1.106158
https://doi.org/10.1063/1.106158