Zobrazeno 1 - 10
of 22
pro vyhledávání: '"K.C. Tzeng"'
Autor:
K.C. Tzeng, Ta Chih Cheng, C.Y. Liao, Z.P. Lin, Chen Yu Chang, J.J. Hsu, S.J. Li, K.S. Yao, C.Y. Chiu
Publikováno v:
Advanced Materials Research. :513-516
Fluorescent silica nanoprobe as a biomarker for detection has attracted much attention in the field of nano-biotechnology recently but no further research applications using fluorescent silica nanoparticles (FSNP) combined with antibody molecules rep
Publikováno v:
Surface and Coatings Technology. 203:922-924
Owing to the large band gap energy of 3.2eV, pure TiO 2 film operates as an efficient photocatalyst under UV light irradiation and exhibits no photocatalytic activity under the visible spectral region. UV is only about 3% of the light existing in the
Publikováno v:
Surface and Coatings Technology. 201:6886-6888
Many plant pathogens such as Enterobacter spp., Pythium spp., and Fusarium spp. can be transmitted by irrigation water. The conventional bactericidal methods often apply chemical pesticides to the water. However, synthetic pesticides are hazardous to
Autor:
K.C. Tu, Shou-Gwo Wuu, C.N. Pen, C.C. Wang, T. H. Hsieh, K. C. Huang, M. J Wang, C.Y. Pai, K.C. Tzeng, W. C. Chiang, C.Y. Tsai, L.C. Tran, Y.W. Chang, Chia-Shiung Tsai, Hau-Yu Lin, Chun-Yen Chang, H.Y. Hwang, H. C. Chu, Ching-Chun Wang, Y.W. Ting, Y.T. Hsieh, K.W. Chen
Publikováno v:
Proceedings of Technical Program of 2012 VLSI Technology, System and Application.
A cylinder-type Metal-Insulator-Metal (MIM) capacitor integrated with advanced 28nm logic High-K/Metal-Gate (HKMG) process for embedded DRAM has been developed. The stacked cell capacitor is formed using low temperature high-K dielectrics to achieve
Autor:
C.Y. Pai, W.H. Kuo, Shou-Gwo Wuu, I.F. Wang, Sreedhar Natarajan, M. J Wang, H.Y. Hwang, H.W. Chin, H. F. Lee, K.C. Tu, K.C. Tzeng, Y.W. Ting, Chia-Cheng Chen, Atul Katoch, L.C. Tran, Kuo-Chin Huang, Chung-Hao Tsai, Chun-Yen Chang, Arun Achyuthan, Ching-Chun Wang, Kuang-Hsin Chen, Cormac Michael O'connell, H.C. Chu, T.H. Hsieh, Chia-Shiung Tsai, W.C. Chiang
Publikováno v:
2011 International Electron Devices Meeting.
This paper presents industry's smallest 0.035um2 high performance embedded DRAM cell with cylinder-type Metal-Insulator-Metal (MIM) capacitor and integrated into 28nm High-K Metal Gate (HKMG) logic technology. This eDRAM memory features an HKMG CMOS
Autor:
H.W. Chin, K. C. Huang, Cormac Michael O'connell, L.C. Tran, T. H. Hsieh, Y. S. Cheng, Chun-Yen Chang, S. G. Wuu, K.C. Tzeng, Chia-Shiung Tsai, C. Y. Shen, Ching-Chun Wang, H. F. Lee, Sreedhar Natarajan, K.C. Tu, C Y. Chen, M. J Wang, H. C. Chu, W. C. Chiang
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
A highly manufacturable embedded DRAM technology at 40nm node is presented. This report provides the characterization data of 128Mbit embedded DRAM test vehicle fabricated by 40nm eDRAM 200MHz low power process. The test vehicle is composed of 32 mac
Autor:
C.A. Coverdale, C.B. Darrow, B.A. Hammel, W.B. Mori, C. Decker, K.C. Tzeng, C. Joshi, C. Clayton
Publikováno v:
High Field Interactions and Short Wavelength Generation.
Many theoretical and computer simulation results have been published recently involving the interaction of short pulse, high intensity lasers with underdense plasmas.1-4 This is a new regime in which to study laser-plasma interactions since the lengt
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