Zobrazeno 1 - 10
of 40
pro vyhledávání: '"K.C. Chhabra"'
Publikováno v:
Infrared Physics & Technology. 36:1115-1123
To increase the detection range in staring FPAs, commonly the integration time Ti is increased, as the range is assumed to increase as one-fourth power of T i , (T i 1 4 ) . It is shown here that the range dependence on Ti is weaker than T i 1 4 , be
Publikováno v:
Infrared Physics. 34:43-48
A simple electrical method for determining the yield of indium bump integration between the infrared photosensing chip and the silicon readout chip in hybrid focal plane arrays (FPAs) is proposed. In our case, the IR photosensing chip consists of a 1
Publikováno v:
Infrared Physics. 31:435-440
The effect of adding a highly doped layer (n2+) to a conventional (n+−n) blocking contact structure on the low frequency responsivity of a photoconductor has been studied. Analytical expressions relating the responsivity to the structure of a n2+
Publikováno v:
Infrared Physics. 31:101-107
Analytical expressions relating the low frequency responsivity of an intrinsic photoconductor with the structure of the blocking contact are presented. Results of numerical calculations for an 8 to 12 μm HgCdTe photoconductive detector show that the
Publikováno v:
Infrared Physics. 30:41-44
Carrier diffusion limited MTF of a back-illuminated HgCdTe-PV detector array has been calculated by including the multiple reflections within a CdTe-HgCdTe structure. Results of these calculations show that there is only a marginal improvement in MTF
Publikováno v:
Infrared Physics. 30:323-329
The effect of a doped layer on the surface of a mercury cadmium telluride photoconductive detector has been investigated theoretically as a function of the ratio of electrically active carriers in the doped layer to that in the base material. It is c
Autor:
K.C. Chhabra, Vishnu Gopal
Publikováno v:
Infrared Physics. 31:333-335
Recently Sclar [N. Sclar, Infrared Phys. 28, 173 (1988); Ref. (l)] has compared the applicability of off-axis and integral cold shield designs to the multielement IR detector arrays. It was concluded that integral cold shields are more desirable for
Publikováno v:
SPIE Proceedings.
The NETD is calculated in FPN limited MCT FPAs, on the basis of a model in which two-point compensation is used and the readout contribution to FPN is not considered. It is shown that the lowest NETD is obtained when x is about 0.235 in MCT.© (1992)
Publikováno v:
Optical Engineering. 31:53
The injection efficiency of an 8- to 14-μm hybrid IR/CCD FPA is calculated from a transcendental equation involving the detector, CCD input currents, and the detector impedance Rd at the operating point. The latter has been varied either by changing
Publikováno v:
IETE Journal of Research. 29:164-167
This paper presents the results of fast interface state measurements using Kuhn's quasi-static technique for MOS capacitors with gate SiO2 grown thermally under dry ultra-high pure oxygen having moisture content of ∼ 4 ppm. This process, besides be