Zobrazeno 1 - 10
of 60
pro vyhledávání: '"K.B. Niclas"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 38:1692-1700
An analysis of the linear power distribution in amplifiers employing the additive amplification principle has been made. It reveals the wide spread of the active devices' contributions to the output power at any one frequency and exposes the band-sha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f689423fcd5ae48164e08063aa6d53
https://doi.org/10.1109/22.60017
https://doi.org/10.1109/22.60017
Autor:
K.B. Niclas
Publikováno v:
MTT-S International Microwave Symposium Digest.
Design and fabrication of compact multi-stage single-ended feedback amplifiers operating from 2- 8 GHz are discussed. The nominal gains are 22 dB in the three-stage unit and 30 dB in the four-stage unit. Measured maximum VSWR's do not exceed 1.9:1. N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b026daae0faa7960394631a18907fdae
https://doi.org/10.1109/mwsym.1981.1129845
https://doi.org/10.1109/mwsym.1981.1129845
Autor:
K.B. Niclas
Publikováno v:
MTT-S International Microwave Symposium Digest.
The performance of multi-stage single-ended GaAs MESFET amplifiers are compared when employing one and the same transistor type. Supporting experimental results include those of a 3-17.5 GHz reflective match module, a two-stage 2-18 GHz feedback ampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9619df45394859b14fa91e5ad3cc3945
https://doi.org/10.1109/mwsym.1984.1131741
https://doi.org/10.1109/mwsym.1984.1131741
Autor:
K.B. Niclas, W.T. Wilser
Publikováno v:
MTT-S International Microwave Symposium Digest.
A 2-12 GHz monolithic feedback amplifier has been designed. Initial experiments, made on a semi-monolithic unit, yielded 5.4 dB of minimum gain from 2-12 GHz and 3.8 dB of minimum gain between 2 and 15.3 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35cf589b1ada488cf5cf8d9c46902000
https://doi.org/10.1109/mwsym.1981.1129924
https://doi.org/10.1109/mwsym.1981.1129924
Publikováno v:
Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.
An amplifier that utilizes eight MESFETs that are evenly distributed over two tiers is considered. A brief description is presented of the circuit design and its fabrication. Among the test results measured for the experimental monolithic matrix ampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::194fbf0405d9f481470efb20316f4bea
https://doi.org/10.1109/mcs.1989.37280
https://doi.org/10.1109/mcs.1989.37280
Autor:
K.B. Niclas, R.R. Pereira
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
The performance of two-tier matrix amplifiers optimized for best noise figure across the 2-18-GHz band is discussed. Previous efforts resulted in degradation of other performance parameters, especially for ultra wideband operation. The present approa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdbb3409d6139de6f9e2b8ff5ef0950
https://doi.org/10.1109/mwsym.1989.38853
https://doi.org/10.1109/mwsym.1989.38853
Autor:
Y.L. Chow, M.E. Read, Phillip Sprangle, T.K. Seshadri, W.T. Wilser, G.A. Juravlev, B.N. Das, M. Miyagi, W.R. Hitchens, F.L. Cain, Kai Chang, V.V. Cherny, J.R. Wait, S. Nishida, R.B. Gold, D.A. Hill, M.H. Keriakos, Kwo Ray Chu, S. Mahapatra, K.K. Joshi, R.H. MacPhie, R.A. Kiehl, E.M. Bastida, A.S. Podgorski, J. Seals, A. K. Ganguly, R. Levy, A.T. Drobot, O. Kitazawa, G. Saulich, K.B. Niclas, Wei-gan Lin, K. Rajaiah, E.C. Burdette, M. Suzuki, John R. Whinnery, Y. Hayashi, M.I. Sobhy, H. H. Szu, Ming Hui Chen, R.L. Ebert
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 28:435-440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9be375deea544b98e5f5098a5cb92b
https://doi.org/10.1109/tmtt.1980.1130094
https://doi.org/10.1109/tmtt.1980.1130094
Autor:
K.B. Niclas, R.R. Pereira
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 37:1069-1077
A 3*3 matrix amplifier for the 6-18-GHz frequency band has been developed. Using MESFETs fabricated on VPE (vapor-phase epitaxial) material, gains of G=23.5+or-0.5 dB with a maximum reflection loss of RL=-10 dB were obtained from 5.2 to 18.7 GHz. Gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7278cebdac3fc962860bae241c1d4dbb
https://doi.org/10.1109/22.24550
https://doi.org/10.1109/22.24550
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 31:447-456
The performance characteristics of n-link distributed amplifiers employing GaAs MESFET'S are studied. At first, formulas of tie symmetrical amplifier using lumped circuit elements are developed for the case of an idealized FET model. The theoretical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb27554c5988348268bfdba857d016cb
https://doi.org/10.1109/tmtt.1983.1131524
https://doi.org/10.1109/tmtt.1983.1131524
Autor:
K.B. Niclas
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 32:896-908
The computed performances of multi-stage single-ended GaAs MESFET amplifiers are compared when employing one and the same transistor type. The circuit principles studied are of the reflective match the Iossy match, the feedback, the distributed, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cde4185061fc34187b1850b386f87cdc
https://doi.org/10.1109/tmtt.1984.1132786
https://doi.org/10.1109/tmtt.1984.1132786