Zobrazeno 1 - 10
of 21
pro vyhledávání: '"K.-P. Muller"'
Autor:
Luca Baroncini, Christina K. S. Muller, Nicole P. Kadzioch, Rebekka Wolfensberger, Doris Russenberger, Simon Bredl, Tafadzwa Mlambo, Roberto F. Speck
Publikováno v:
Frontiers in Immunology, Vol 15 (2024)
IntroductionVery little is known about the role of macrophages as immune mediators during natural HIV infection. Humanized mice are an extremely valuable in vivo model for studying HIV pathogenesis. However, the presence of murine mononuclear phagocy
Externí odkaz:
https://doaj.org/article/06401074fb03470592dda5711981635e
Autor:
Christina K. S. Muller, Julian Spagnuolo, Annette Audigé, Andrew Chancellor, Doris Russenberger, Alexandra U. Scherrer, Matthias Hoffmann, Roger Kouyos, Manuel Battegay, Gennaro De Libero, Roberto F. Speck, the Swiss HIV Cohort Study
Publikováno v:
Infectious Agents and Cancer, Vol 16, Iss 1, Pp 1-15 (2021)
Abstract Background Despite successful combined antiretroviral therapy (cART), the risk of non-AIDS defining cancers (NADCs) remains higher for HIV-infected individuals than the general population. The reason for this increase is highly disputed. Her
Externí odkaz:
https://doaj.org/article/1aebcb623b2c4582bc273362ad7f6b45
Publikováno v:
Revista Médica Clínica Las Condes, Vol 25, Iss 2, Pp 380-388 (2014)
Hoy en día el desarrollo de las estructuras craneofaciales no puede ser evaluado sin analizar la influencia que tienen las distintas funciones que se llevan a cabo en la cavidad oral. Malos hábitos orales que se prolongan en el tiempo como la deglu
Externí odkaz:
https://doaj.org/article/ae9d24aa69ef401699650cd6362f8f38
Autor:
Kenneth P. Rodbell, Kyeong-Hyeon Kim, Kevin Stawiasz, P. Oldiges, Conal E. Murray, J. G. Massey, K. P. Muller, Michael S. Gordon, H.H.K. Tang
Publikováno v:
IRPS
Measurements of the soft error upset cross section for SOI FinFET SRAMs are compared to earlier generation PDSOI SRAMs, with the FinFET circuit showing 2–3 orders of magnitude lower soft error susceptibility. This improvement is shown by simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2c3dfee5961a61ed45f0cc9f8e07e6
https://doi.org/10.1109/irps.2015.7112729
https://doi.org/10.1109/irps.2015.7112729
Autor:
K. P. Muller, Munir D. Naeem, Peter D. Hoh, Hung Y. Ng, Michael D. Armacost, M. Gutsche, S. Srinivasan, B. Spuler, W. Yan, Richard Wise, George A. Kaplita, J. H. Keller, Scott Halle, A. Gutmann, Jeffrey J. Brown
Publikováno v:
IBM Journal of Research and Development. 43:39-72
An overview is presented of plasma-etching processes used in the fabrication of ULSI (ultralarge-scale integrated) semiconductor circuits, with emphasis on work in our facilities. Such circuits contain structures having minimum pattern widths of 0.25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abcf65bfb6a1b09d6890a9762cf622f
https://doi.org/10.1147/rd.431.0039
https://doi.org/10.1147/rd.431.0039
Autor:
K.-P. Muller, D. Haarer
Publikováno v:
Physical Review Letters. 66:2344-2347
Photochemical and photophysical hole burning is a well established technique for eliminating the large inhomogeneous broadening of electronic transitions, which dominates the optical spectroscopy of amorphous solids. With the possibility of measuring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f898481231d9c3b4783f9d4cc185a3be
https://doi.org/10.1103/physrevlett.66.2344
https://doi.org/10.1103/physrevlett.66.2344
Autor:
Philip J. Oldiges, D.D. Reinhardt, Kenneth P. Rodbell, A. KleinOsowski, C. Plettner, M.S. Gordon, J. Hergenrother, Ethan H. Cannon, K. P. Muller, H.H.K. Tang, David F. Heidel
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design and Technology.
Device technology scaling continues to deliver faster and smaller transistors, contributing to IBMs continued leadership in server systems. However, there is also a dark side to device technology scaling. As transistors shrink, the amount of charge r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f15f52ae97edb308e4c4479afdf7a02
https://doi.org/10.1109/icicdt.2007.4299572
https://doi.org/10.1109/icicdt.2007.4299572
Publikováno v:
Microelectronic Engineering. 6:333-342
The demagnifying ion projection which was developed by IMS seems to be the most promising mask-based technique for this extreme pattern range. The most important arguments are a 10x or even 20x mask scale and the capability of resistless patterning f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3121bed79031a139152c63b93d145e51
https://doi.org/10.1016/0167-9317(87)90057-8
https://doi.org/10.1016/0167-9317(87)90057-8
Autor:
A. Heuberger, Gerhard Stengl, L. M. Buchmann, G. Stangl, F. Paschke, Hans Loschner, C. Traher, L. Csepregi, E. Hammel, S. Jacob, W. Fallmann, K. P. Muller, E. Cekan
Publikováno v:
Microelectronic Engineering. 9:289-293
Different kinds of resist materials were used to prove the high versatility of Ion Projection Lithography (IPL). With standard exposure and developing conditions test structures in the sub-0.5-μm range were obtained routinely. A new dry development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1b12007cb68228895a90e28660c6aa
https://doi.org/10.1016/0167-9317(89)90067-1
https://doi.org/10.1016/0167-9317(89)90067-1
Publikováno v:
Journal of Physics B: Atomic and Molecular Physics. 20:2803-2808
Rydberg states of hydrogen-like O7+ ions with main quantum number n between about 75 and 110 produced by passing a beam of 27 MeV O5+ ions through a carbon foil have been detected by field ionisation in a static electric field. Coincidence detection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c394ab98ff7359754f04e4619799156c
https://doi.org/10.1088/0022-3700/20/12/024
https://doi.org/10.1088/0022-3700/20/12/024