Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Autor: Y. J. Kuang, K. Zelazna, Kin Man Yu, Robert Kudrawiec, Wladek Walukiewicz, Charles W. Tu, A. V. Luce

Publikováno v: Solar Energy Materials and Solar Cells. 188:99-104

Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the incorporation of ~2% of N atoms and the required partial occupation of the intermediat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b956fba45db4505533da21d8a088d99b
https://doi.org/10.1016/j.solmat.2018.08.024

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Autor: Laurent Lombez, N. Yacoubi, Pierre Râle, Robert Kudrawiec, K. Zelazna, Mathieu Perrin, Olivier Durand, S. Ilahi, Fares Chouchane, Samy Almosni, Charles Cornet, Jean-François Guillemoles

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2015, 141, pp.291-298. ⟨10.1016/j.solmat.2015.06.003⟩
Solar Energy Materials and Solar Cells, 2015, 141, pp.291-298. ⟨10.1016/j.solmat.2015.06.003⟩

International audience; The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples und

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9e44ce36b022e5e25408f638ea6cda5
https://hal.archives-ouvertes.fr/hal-01166475

Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

Autor: Jarosław Serafińczuk, Marta Gladysiewicz, K. Zelazna, Jan Misiewicz, Johan Dekoster, M. P. Polak, P. Scharoch, Robert Kudrawiec

Publikováno v: Applied Physics Letters. 106:142102

Contactless electroreflectance is applied to study direct optical transitions from the heavy hole, light hole, and spin-orbit split-off band to the conduction band in compressively strained Ge1−xSnx layers of various Sn concentrations at room tempe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5420fcbfb715a113de5a81886a0a357a
https://doi.org/10.1063/1.4917236

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.