Zobrazeno 1 - 10
of 164
pro vyhledávání: '"K. Zdansky"'
Publikováno v:
Semiconductor Science and Technology. 21:1256-1260
InP crystals were grown by the Czochralski technique with an admixture of Cu in the melt. Samples of as-grown crystals were of n-type conductivity with the estimated concentration of Cu smaller than 5 × 1015 cm−3. The samples were converted to the
Publikováno v:
The European Physical Journal Applied Physics. 27:197-200
High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by
Publikováno v:
Semiconductor Science and Technology. 18:938-944
High-purity InP crystals were grown by the liquid encapsulated Czochralski method from undoped InP melt and from the melt doped with Ca, Zn, Fe or Mn or co-doped with Ti and Zn. Wafers from the grown crystals were annealed in phosphorus ambient for 9
Publikováno v:
physica status solidi (a). 195:74-80
A series of InP single crystals doped with Mn, Fe, Ti and Ni with two levels of doping, (i) larger (heavy doping); and (ii) smaller (light doping) than the background doping were grown using the Czochralski technique. The crystals were studied by inf
Publikováno v:
Journal of Applied Physics. 79:3611-3618
The dc, steady state charge transport in 200‐μm‐thick semi‐insulating GaAs samples with two large whole area metal contacts is calculated numerically. The material is assumed to have shallow donors and an excess of deep acceptors. The distribu
Autor:
I. O. Skillicorn, Y. Hou, M. Edwards, Anna Vinattieri, L. Carraresi, C. N. Booth, R. M. Turnbull, G. Hughes, P.H. Sharp, F. Foster, J. Matheson, I. ten Have, F. Combley, B.K. Jones, T. J. Sloan, M. Nuti, Paul Seller, U. Vanni, B. Lisowski, Kevin M. Smith, Nicola Tartoni, Craig Buttar, J.G. Lynch, Saverio D'Auria, Filippo Nava, Federico Cindolo, G. Hill, C. Raine, R. Gray, Antonino Zichichi, K. Zdansky, Marcello Colocci, P.G. Pelfer, Val O'Shea, C. Del Papa, K. Shankar, M. Dogru, J. Santana, R. Bertin, Peter A. Houston, A. Francescato, S.P. Beaumont
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 342:83-89
The progress on the development of gallium arsenide particle detectors is reviewed. The limitation to the performance is the presence of traps. Studies of the trap properties using α particle DLTS measurements and C-V measurements are described.
Publikováno v:
ChemInform. 39
Publikováno v:
International Conference on Indium Phosphide and Related Materials, 2005..
Annealed wafers of Czochralski grown copper doped InP were investigated by temperature dependent Hall measurements and low-temperature Fourier transform infrared absorption. New peaks around 2100 cm/sup -1/ were interpreted as due to Cu/sup 2+/ 3d in
Publikováno v:
The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004..
Growth ofihe GaxIn1-xP/GaAs(J00) heterostructuresfrom the liquid phase wru optimized at 800°C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of
Publikováno v:
Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96.
Cadmium telluride (CdTe) is a wide band-gap semiconductor which has many applications in various fields, from detectors of nuclear radiation to infra-red diodes and solar cells. The aim of this paper is to describe the new observed experimental effec