Zobrazeno 1 - 10
of 22
pro vyhledávání: '"K. Yu. Shubina"'
Autor:
Pavel Vladimirovich Seredin, Nikolay Kurilo, Dmitry L. Goloshchapov, Vladimir Kashkarov, Aleksandr S. Lenshin, Nikita Buylov, Dmitry Nesterov, Andrey Mizerov, Sergey A. Kukushkin, S. Timoshnev, K. Yu. Shubina, M. S. Sobolev
Publikováno v:
Photonics, Vol 10, Iss 11, p 1209 (2023)
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si subs
Externí odkaz:
https://doaj.org/article/74efe202a4f643bbb67a34579232f272
Autor:
D. V. Mokhov, T. N. Berezovskaya, A. M. Mizerov, K. Yu. Shubina, A. A. Kolmakova, A. G. Kolmakov, M. L. Kheifetz
Publikováno v:
Nonlinear Phenomena in Complex Systems. :13-20
The results of a study of liquid photochemical metal-assisted etching of a series of samples of n-type Ga-polar GaN layers grown by molecular-beam epitaxy with nitrogen plasma activation are presented. Under the chosen conditions of the etching proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4390e526678b3dbe258b7c0553b33103
https://doi.org/10.33581/1561-4085-2022-25-1-13-20
https://doi.org/10.33581/1561-4085-2022-25-1-13-20
Autor:
A. A. Vasiliev, V. Yu. Davydov, K. Yu. Shubina, A. V. Babichev, Ivan Mukhin, S. A. Kadinskaya, I. A. Eliseyev, A. Yu. Egorov, Eduard Moiseev, Sergey A. Blokhin, A. A. Blokhin, N. V. Kryzhanovskaya, Pavel N. Brunkov
Publikováno v:
Semiconductors. 54:991-998
The results of experiments aimed at fabricating and studying the properties of photodetector structures based on single-layer graphene produced by chemical vapor deposition are presented. The configuration of a Ta2O5 vertical microcavity with a reson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3500366eeb854b6347cd0828bbc6534d
https://doi.org/10.1134/s1063782620090031
https://doi.org/10.1134/s1063782620090031
Autor:
K. Yu. Shubina, A. D. Buravlev, T. N. Berezovskaya, Andrey Osipov, S. N. Timoshnev, A. M. Mizerov, D. V. Mokhov, S. A. Kukushkin, Sh. Sh. Sharofidinov
Publikováno v:
Physics of the Solid State. 61:2277-2281
The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of GaN films on hybrid SiC/Si(111) substrates by nitrogen plasma-assisted molecular bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f7baa5307276732020c86e2589a825
https://doi.org/10.1134/s106378341912031x
https://doi.org/10.1134/s106378341912031x
Autor:
T. N. Berezovskaya, Ekaterina V. Nikitina, K. Yu. Shubina, D. V. Mokhov, A. D. Bouravleuv, A. M. Mizerov
Publikováno v:
Semiconductors. 53:1717-1723
The results of studies of photochemical etching processes, which were carried out without applying external voltage, for structures with Ga- and N-polar GaN layers synthesized by molecular-beam epitaxy with the plasma activation of nitrogen are repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06ab8c5ccff2dcd7e4004522c8ca2b47
https://doi.org/10.1134/s1063782619160176
https://doi.org/10.1134/s1063782619160176
Autor:
K. Yu. Shubina, E. A. Lubyankina, S. N. Timoshnev, V. V. Toporov, B. H. Bairamov, A. D. Bouravleuv, A. M. Mizerov
Publikováno v:
Semiconductors. 54:1847-1849
Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated by mutu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12b00a18b209ef6819b808a5948bc96f
https://doi.org/10.1134/s1063782620140183
https://doi.org/10.1134/s1063782620140183
Autor:
K. Yu. Shubina, S. N. Timoshnev, Ekaterina V. Nikitina, I. V. Shtrom, M. S. Sobolev, T. N. Berezovskaia, A. M. Mizerov, A. D. Bouravleuv
Publikováno v:
Semiconductors. 52:1529-1533
The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d06863be047b6922854e17a8ee56e007
https://doi.org/10.1134/s1063782618120175
https://doi.org/10.1134/s1063782618120175
Autor:
V V Lendyashova, K P Kotlyar, V O Gridchin, R R Reznik, A I Lihachev, K Yu Shubina, T N Berezovskaya, E V Nikitina, I P Soshnikov, G E Cirlin
Publikováno v:
Journal of Physics: Conference Series. 2086:012191
In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of sepa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5c645313a891de98bc7f115127ade6
https://doi.org/10.1088/1742-6596/2086/1/012191
https://doi.org/10.1088/1742-6596/2086/1/012191
Autor:
K Yu Shubina, D V Mokhov, T N Berezovskaya, E V Pirogov, A V Nashchekin, Sh Sh Sharofidinov, A M Mizerov
Publikováno v:
Journal of Physics: Conference Series. 2086:012037
In this work, the AlN/Si(111) epitaxial structures grown consistently by plasma assisted molecular beam epitaxy (PA MBE) and hydride vapour phase epitaxy (HVPE) methods were studied. The PA MBE AlN buffer layers were synthesized via coalescence overg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377c89513a7edaaa2bec39d63ce8bf1e
https://doi.org/10.1088/1742-6596/2086/1/012037
https://doi.org/10.1088/1742-6596/2086/1/012037
Autor:
K. P. Kotlyar, K. Yu. Shubina, D. V. Mokhov, T. N. Berezovskaya, Ekaterina V. Nikitina, A. D. Bouravleuv, A. M. Mizerov, Ivan A. Morozov
Publikováno v:
Semiconductors. 52:2117-2119
Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf2fec953138960b45ce2db1fde9961
https://doi.org/10.1134/s1063782618160297
https://doi.org/10.1134/s1063782618160297