Zobrazeno 1 - 10
of 18
pro vyhledávání: '"K. Yu Shugurov"'
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b7e893d7875a4a6fe8fd5a3606a63dc
https://doi.org/10.1109/iclo54117.2022.9840144
https://doi.org/10.1109/iclo54117.2022.9840144
Publikováno v:
Nanotechnology. 34:245204
Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fa1ccbf7ec36d3054f9cf4a1504bfab
https://doi.org/10.1088/1361-6528/acc4cb
https://doi.org/10.1088/1361-6528/acc4cb
Autor:
K. P. Kotlyar, K. Yu Shugurov, Alexey D. Bolshakov, Igor Shtrom, S. A. Kukushkin, Rodion R. Reznik, Alexey M. Mozharov, Ivan Mukhin, A.V. Osipov, G. E. Cirlin, O. Yu Koval, Vladimir V. Fedorov
Publikováno v:
Materials Science in Semiconductor Processing. 90:20-25
In this paper we study the solar cell based on GaN nanowires array grown on Si substrate with buffer SiC layer via molecular beam epitaxy. Crystal quality of SiC layer and GaN nanowires was studied by means of Raman scattering technique and low tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf517e440226e9961e9b2e96fee3305a
https://doi.org/10.1016/j.mssp.2018.09.024
https://doi.org/10.1016/j.mssp.2018.09.024
Autor:
Alexey M. Mozharov, L N Dvoretckaia, G. A. Sapunov, V. A. Shkoldin, K. Yu Shugurov, M. S. Mukhin, Ivan Mukhin, Alexey D. Bolshakov, G. E. Cirlin, Vladimir V. Fedorov
Publikováno v:
Semiconductors. 52:2088-2091
In this paper we demonstrate the results on selective area growth of GaP nanowires via self-catalyzed growth method using molecular beam epitaxy (MBE) technique on patterned Si(111) substrates. The pattern fabrication method on a base of the photolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf619308651a813338e5504b2adf5a0
https://doi.org/10.1134/s1063782618160054
https://doi.org/10.1134/s1063782618160054
Autor:
L N Dvoretckaia, Alexey M. Mozharov, K. Yu Shugurov, V. A. Shkoldin, Ivan Mukhin, G. A. Sapunov, Vladimir V. Fedorov, Alexey D. Bolshakov, G. E. Cirlin, Demid A. Kirilenko
Publikováno v:
Semiconductors. 52:2092-2095
Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62f4ff08c94511745f23850d01232cf
https://doi.org/10.1134/s106378261816008x
https://doi.org/10.1134/s106378261816008x
Autor:
Vladimir V. Fedorov, A. V. Uvarov, Alexey M. Mozharov, G E Cirlin, K. Yu Shugurov, V. Yu. Mikhailovskii, Alexey D. Bolshakov, Artem Baranov, Vladimir Neplokh, D. A. Kudryashov, Igor Shtrom, Maria Tchernycheva, Ivan Mukhin, G. A. Sapunov
Publikováno v:
Nanotechnology. 31(24)
The influence of hydrogen plasma treatment on electrical and optical properties of the vertical GaN nanowires (NWs)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::094591a1431ffe23708eb43982578def
https://pubmed.ncbi.nlm.nih.gov/32066120
https://pubmed.ncbi.nlm.nih.gov/32066120
Autor:
A I Baranov, D A Kudyashov, I A Morozov, K Yu Shugurov, A V Uvarov, A A Maximova, E A Vyacheslavova, A S Gudovskikh
Publikováno v:
Journal of Physics: Conference Series. 2086:012078
Arrays of vertically aligned silicon nanowires were fabricated by cryogenic dry etching. The post-processing technology was developed to full coating of arrays of NWs by SU-8 and release the top side of SiNWs. The Schottky diodes were fabricated on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad517aeeaa420ea3046c27fd0b44d2cc
https://doi.org/10.1088/1742-6596/2086/1/012078
https://doi.org/10.1088/1742-6596/2086/1/012078
Autor:
Alexey M. Mozharov, A. V. Uvarov, M. S. Mukhin, Igor Shtrom, G E Cirlin, Ivan Mukhin, G. A. Sapunov, K. Yu Shugurov, Vladimir V. Fedorov, Alexey D. Bolshakov
Publikováno v:
Nanotechnology. 30(39)
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0550f6450e23cb6b1d79444ca636380
https://pubmed.ncbi.nlm.nih.gov/31234150
https://pubmed.ncbi.nlm.nih.gov/31234150
Autor:
Artem Baranov, A. V. Uvarov, L N Dvoretckaia, E. A. Vyacheslavova, Alexander S. Gudovskikh, Ivan A. Morozov, K. Yu Shugurov, D. A. Kudryashov
Publikováno v:
Journal of Physics: Conference Series. 1695:012089
Arrays of silicon nanowires were fabricated by dry etching in the ICP mode in a mixture of SF6/O2 gases at a temperature of-140 °C. Defects located near the wafer surface with E a =0.30 eV, σ=(1–10)×10−14 cm2 and E a =0.68–0.74 eV, σ=1×10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97121a6b33d64c7ad34ee367487c6a37
https://doi.org/10.1088/1742-6596/1695/1/012089
https://doi.org/10.1088/1742-6596/1695/1/012089
Autor:
K. Yu Shugurov, A. V. Uvarov, Artem Baranov, D. A. Kudryashov, Alexander S. Gudovskikh, Ivan A. Morozov
Publikováno v:
Journal of Physics: Conference Series. 1697:012060
The work is devoted to exploration of arrays of vertical aligned silicon nanowires (SiNWs) obtained by cryogenic dry etching in ICP mode with height of 4.5-5.5 μm and aspect ratio of 7. It was shown that geometry of nanowires has crucial influence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccc5962d0f75f18fa35fb1ac3fa5c51b
https://doi.org/10.1088/1742-6596/1697/1/012060
https://doi.org/10.1088/1742-6596/1697/1/012060