Zobrazeno 1 - 10
of 65
pro vyhledávání: '"K. Yodoshi"'
Autor:
K. Yodoshi, Yasoo Harada, Minoru Sawada, Shigeharu Matsushita, Kohji Matsumura, Daijiro Inoue
Publikováno v:
Solid-State Electronics. 41:1475-1479
We have investigated the influence of high temperature annealing on modulation doped structures of AlGaAs/GaAs, AlGaAs/InGaAs and InAlAs/InGaAs systems grown by molecular beam epitaxy. Hall-measurement reveals reduction in two-dimensional electron ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882cd0bae60ee6989746937422ed8271
https://doi.org/10.1016/s0038-1101(97)00092-0
https://doi.org/10.1016/s0038-1101(97)00092-0
Autor:
Kaori Misawa, Makoto Akizuki, Hiroyuki Aoe, Kazunobu Mameno, Hiroyuki Watanabe, Hideki Mizuhara, K. Yodoshi, Hiroshi Hanafusa, Mamoru Arimoto
Publikováno v:
Applied Surface Science. :675-679
We have developed a novel process for intermetal dielectrics (IMD) using ion-implanted organic spin-on glass (SOG). Ion implantation into the SOG films improves the hot carrier (HC) reliability, which deteriorates from the use of organic SOG films. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::376fd36a92678999c26f374033652359
https://doi.org/10.1016/s0169-4332(96)00956-7
https://doi.org/10.1016/s0169-4332(96)00956-7
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1844-1850
Optimization of the misorientation angle of GaAs substrates to prepare multiple quantum wells (MQWS) and multiple quantum barriers (MQBs) with abrupt barrier-well interfaces is reported. The characteristics of AlGaInP strained MQW laser diodes incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9a83ab09510f006e726548d695a9e8
https://doi.org/10.1109/3.234442
https://doi.org/10.1109/3.234442
Publikováno v:
The Review of Laser Engineering. 21:305-311
A fundamental transverse mode, 200 mW high-power laser diode that oscillates at a wavelength of 860 nm for use as a light source for SHG devices has been developed. The maximum output power was 500 mW under CW operation. Stable operation under an out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99a07560e3b5b0785210283a7f7679e
https://doi.org/10.2184/lsj.21.2_305
https://doi.org/10.2184/lsj.21.2_305
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1483-1490
(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P epitaxial layers and the basic characteristics of AlGaInP laser diodes grown on misoriented substrates by metalorganic chemical-vapor deposition (MOCVD) are described. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a18080ddf60e584ef65d8bf10fd5df3d
https://doi.org/10.1109/3.89967
https://doi.org/10.1109/3.89967
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1386-1390
Room-temperature continuous wave (CW) operation was achieved using GaAs buried heterostructure vertical cavity top-surface emitting lasers with both GaAlAs/AlAs and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). One-step organometallic va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d9d97e1f2f76203fb7eb96a0273951
https://doi.org/10.1109/3.89955
https://doi.org/10.1109/3.89955
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a34704631eafe662e5f1bdb274a91251
https://doi.org/10.1109/islc.1992.763616
https://doi.org/10.1109/islc.1992.763616
Publikováno v:
Applied Physics Letters. 67:270-272
Highly conducting p‐type ZnSe and ZnSSe were fabricated by simple N2 gas doping during molecular beam epitaxial growth without the use of any activation method, such as discharge and cracking. p‐type conduction in the N2‐gas doped ZnSe is produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4f135752610c32909fb51f20f8b61f
https://doi.org/10.1063/1.114779
https://doi.org/10.1063/1.114779
Publikováno v:
Proceedings of LEOS'94.
We investigated a strain-compensated MQW structure in order to introduce a large strain into a AlGaInP quantum well and achieved a low-threshold 630-nm-band laser diode with a high maximum operating temperature for the first time. The active region c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dfb8a7e31c426f58ce0c2eaba34e020
https://doi.org/10.1109/leos.1994.587018
https://doi.org/10.1109/leos.1994.587018
Autor:
Ryoji Hiroyama, Masayuki Shono, S. Honda, Y. Bessho, Hiroyuki Kase, T. Niina, T. Ikegami, T. Yamaguchi, K. Yodoshi
Publikováno v:
Proceedings of IEEE 14th International Semiconductor Laser Conference.
Summary form only given. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes were investigated for the first time. The lowest threshold current of 33 mA and the highest maximum operating temperature of 90/spl deg/C were achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b386f6c2df3d0b2bc6f0e46c429aa2f
https://doi.org/10.1109/islc.1994.519336
https://doi.org/10.1109/islc.1994.519336