Zobrazeno 1 - 10
of 153
pro vyhledávání: '"K. Y. Suh"'
Publikováno v:
The Journal of Chemical Physics. 116:7714-7718
We report ordering of polymer drops that takes place when a thin polystyrene film confined by polydimethylsiloxane walls dewets on a silicon substrate. When annealed above the glass transition temperature, the thin polymer film dewets, resulting in t
Autor:
Hyunjung Lee, K. Y. Suh
Publikováno v:
The Journal of Chemical Physics. 115:8204-8208
We report dewetting behavior of thermally annealed thin polymer strips of poly (styrene-b-butadiene-b-styrene) and polystyrene films that are laterally confined by polydimethylsiloxane walls on silicon substrate. Regularly spaced holes are initially
Autor:
K. Y. Suh, Hong H. Lee
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 39:2217-2224
We calculate the free energy of an AB diblock copolymer thin film of cylindrical morphology under confined geometry and find that the size of the cylinder can be asymmetric, depending on the film thickness and surface tension. The size of the cylinde
Publikováno v:
Journal of Applied Physics. 85:233-236
A simple two-step mechanism is used to derive the kinetics of the As/P exchange reaction which takes place on an epitaxially grown InP surface exposed to As flux. The first step involves surface exchange of arsenic with phosphorus, which is then foll
Publikováno v:
The Journal of Chemical Physics. 108:1253-1256
We present a theoretical result on the ordering of cylindrical morphology in diblock and triblock copolymers. The equilibrium morphology of A–B diblock and A–B–A triblock copolymer films is shown to have the cylinders oriented parallel or verti
Autor:
K. Y. Suh, Hong H. Lee
Publikováno v:
Journal of Applied Physics. 80:6716-6719
A theoretical model called the ‘‘multibody model’’ is developed for the composition dependence of the activation energy. The model that is based on the diffusion required of the recrystallization for the solid phase epitaxy does not involve a
Autor:
K. Y. Suh, Hong H. Lee
Publikováno v:
Journal of Applied Physics. 84:2361-2363
We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1−XGeX films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and is
Autor:
K. Y. Suh, Hong H. Lee
Publikováno v:
Journal of Applied Physics. 83:4991-4993
A regularly undulating surface topography has been observed during growth of heteroepitaxial layers such as Si1−xGex/Si2 and InxGa1−xAs/GaAs5. We present a modified evolution mechanism of this ripple structure, which consists of initial roughenin
Autor:
K. Y. Suh, Hong H. Lee
Publikováno v:
Journal of Applied Physics. 81:7067-7069
The compensation effect, well known in catalytic reactions, is shown to apply equally well to the solid-phase epitaxial (SPE) growth of Si1−xGex alloys. A linear relationship exists between the logarithm of the pre-exponential factor and the activa
Publikováno v:
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The neurotrophins are a class of signaling molecules known for their growth and survival-promoting activities during neuronal development. Recent studies suggest that the neurotrophins, including brain-derived neurotrophic factor (BDNF), can also dra