Zobrazeno 1 - 10
of 74
pro vyhledávání: '"K. Wandel"'
Publikováno v:
Surface and Coatings Technology. :786-791
Low-temperature (80–130°C) high-quality silicon nitride was grown on Si substrates using a SiH4 (5% in He)/NH3/Ar chemistry and ICPECVD technology. The influence of percentage SiH4, temperature, chamber pressure and source power on the wet etch ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7dbe1b91dce9fa686a42c47f3a9754
https://doi.org/10.1016/s0257-8972(01)01184-7
https://doi.org/10.1016/s0257-8972(01)01184-7
Publikováno v:
Surface and Coatings Technology. :522-527
The composition of the gas phase during remote plasma-enhanced chemical vapour deposition (RPECVD) of SiO2 from a diluted SiH4N2OHe mixture was investigated by mass spectroscopy. We chose the gas flow rates such that no direct excitation of SiH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3efae877b5891e53e8c3aa6e38cde71a
https://doi.org/10.1016/0257-8972(95)08256-5
https://doi.org/10.1016/0257-8972(95)08256-5
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 353:647-654
The As rich SiO2/In0.53Ga0.47As interface which is produced by wet chemical etching before SiO2 deposition to improve the electronic properties of the interface has been studied. SiO2-layers of about 10 to 20 nm thickness have been deposited in a pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c057c657bb51e3db71d0eacad7c05613
https://doi.org/10.1007/bf00321342
https://doi.org/10.1007/bf00321342
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:3023-3032
Indium diffusion into Hg1−xCdxTe (0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::622f2358cc16914f5830dfc478fd4ba1
https://doi.org/10.1116/1.578931
https://doi.org/10.1116/1.578931
Publikováno v:
Journal of Applied Physics. 76:880-886
Results on the diffusion behavior of InGaAs host atoms as well as Zn and Cd atoms in plasma‐enhanced chemical‐vapor‐deposited SiO2 layers are reported. The group‐III elements In and Ga diffuse very fast in SiO2 at annealing temperatures from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c1291ce92f631becc8bc116e921214
https://doi.org/10.1063/1.357764
https://doi.org/10.1063/1.357764
Publikováno v:
Thin Solid Films. 233:240-243
Spectroscopic ellipsometry in the range 1.5–4.45 eV was used to study the composition and structure of SiOx layers on silicon produced by remote plasma enhanced chemical vapor deposition. For deposition temperatures less than 200 °C the spectra ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32da549f982589a4e857f2148e2c8ff
https://doi.org/10.1016/0040-6090(93)90099-b
https://doi.org/10.1016/0040-6090(93)90099-b
Publikováno v:
Semiconductor Science and Technology. 8:1438-1444
An (In,Ga)As surface enriched in elemental arsenic by etching in H2SO4:H2O2:H2O=1:1:125 has been investigated by means of ellipsometry, angle-resolved photoelectron spectroscopy (ARXPS) and scanning electron microscopy (SEM). The deconvolution of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64a3c0170890baad63ba24c96af2220
https://doi.org/10.1088/0268-1242/8/7/039
https://doi.org/10.1088/0268-1242/8/7/039
Publikováno v:
Journal of Applied Physics. 73:4825-4830
The distribution of Fe implanted at medium (1–4×1014 cm−2) and low (2×1012 cm−2) doses into InGaAs and annealed with or without a cap is investigated and the degree of compensation of such implanted regions is assessed. Secondary ion mass spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63952a230b69e77eeeab0a20c6638740
https://doi.org/10.1063/1.353797
https://doi.org/10.1063/1.353797
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 346:23-28
The surface of (In, Ga)As has been investigated by photoelectron spectroscopy (XPS) and ellipsometry after different etching steps with a solution containing sulphuric acid to form an As rich surface layer. It was found that after rinsing the samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03cc66679ef203a558c0be3b8d7bd4e1
https://doi.org/10.1007/bf00321376
https://doi.org/10.1007/bf00321376
Publikováno v:
Journal of Applied Physics. 77:945-947
Results on the passivation and antireflection coating of InGaAs:Fe metal‐semiconductor‐metal photodetectors using remote plasma‐enhanced chemical vapor deposited SiO2 layers are reported. The deposition of SiO2 on the detector surface leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb79bc560e909882beda483d3bdd39b
https://doi.org/10.1063/1.359025
https://doi.org/10.1063/1.359025