Zobrazeno 1 - 10
of 10
pro vyhledávání: '"K. W. Evans‐Lutterodt"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1730-1734
In materials that have bulk inversion symmetry, optical second harmonic generation (SHG) is sensitive to regions where the inversion symmetry is broken, i.e., a surface or interface. We measure SHG from the interface between Si(100) and thin layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc330156a7a3ce5e68780c32b551092
https://doi.org/10.1116/1.581292
https://doi.org/10.1116/1.581292
Autor:
D. Brasen, K. W. Evans‐Lutterodt, G. S. Higashi, J. L. Dawson, L. Manchanda, T. Boone, K. Krisch, Martin L. Green, Mau‐Tsu Tang
Publikováno v:
Journal of Applied Physics. 77:4746-4749
Using x‐ray diffraction techniques, we measure the root‐mean‐square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f2c84e059b0e900d22b4c312062b33
https://doi.org/10.1063/1.359410
https://doi.org/10.1063/1.359410
Autor:
H. M. van Driel, Wayne H. Knox, Frieder H. Baumann, Steven T. Cundiff, K. W. Evans-Lutterodt, Mau‐Tsu Tang, Martin L. Green
Publikováno v:
Applied Physics Letters. 70:1414-1416
The roughness of the Si(100)/SiO2 interface is measured using both surface second harmonic generation (SSHG) and x-ray scattering. A comparison between these techniques shows a clear correlation for typical industrial oxides, despite the techniques b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025e61d0293fb06ef32e4bebbfd97366
https://doi.org/10.1063/1.118592
https://doi.org/10.1063/1.118592
Publikováno v:
Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference.
Summary form only given. Second harmonic generation (SHG) only occurs, in the dipole approximation, in material that is noninversion symmetric. Consequently, in material with bulk inversion symmetry, SHG only occurs near a surface or an interface tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94c043a86040d590a802c457ab9c2fd
https://doi.org/10.1109/qels.1999.807624
https://doi.org/10.1109/qels.1999.807624
Autor:
Leonard C. Feldman, H.‐T. Tang, Mau‐Tsu Tang, D. Brasen, W. Lennard, K. Krisch, Martin L. Green, K. W. Evans-Lutterodt, L. Manchanda
Publikováno v:
Applied Physics Letters. 65:848-850
Oxynitrides can suppress the diffusion of boron from the polycrystalline silicon gate electrode to the channel region of an ultralarge scale integrated device, and are therefore important potential substrates for thin SiO2 gates. Direct oxynitridatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4571b2b798ed0f9c941d961cbab91a6
https://doi.org/10.1063/1.112980
https://doi.org/10.1063/1.112980
Autor:
G. S. Higashi, T. Boone, K. Krisch, D. Brasen, K. W. Evans-Lutterodt, Martin L. Green, Mau‐Tsu Tang, L. Manchanda
Publikováno v:
Applied Physics Letters. 64:748-750
The growth temperature dependence of the thin thermally oxidized Si(001)/SiO2 interface width was studied using synchrotron x‐ray diffraction. Nine samples with oxide thickness of about 100 A were studied, with growth temperatures ranging from 800
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81d3cfd31f38cecacc8623886cf872c
https://doi.org/10.1063/1.111054
https://doi.org/10.1063/1.111054
Publikováno v:
Applied Physics Letters. 62:3144-3146
We use synchrotron x‐ray diffraction to characterize the roughness of the buried Si(001)/SiO2 interface, for three types of oxide, without modification of the interface. We show that the thermal oxide interface is 0.5±0.1 times as rough as the nat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac103f6aa1adcf49f87a55d3c32b9455
https://doi.org/10.1063/1.109109
https://doi.org/10.1063/1.109109
Autor:
Steven T. Cundiff, Mau‐Tsu Tang, H. M. van Driel, K. W. Evans-Lutterodt, Frieder H. Baumann, Wayne H. Knox
Publikováno v:
Springer Series in Chemical Physics ISBN: 9783642803161
Surface second harmonic generation from the Si(100)/SiO2 interface is measured using 10 fs pulses. The dependence of the oscillation amplitudes as a function of azimuthal angle on miscut and surface roughness is examined.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d260746c5400a195b26200583afb7a2d
https://doi.org/10.1007/978-3-642-80314-7_198
https://doi.org/10.1007/978-3-642-80314-7_198
Autor:
Mau-Tsu Tang, K. W. Evans-Lutterodt
Publikováno v:
MRS Proceedings. 399
Results from X-ray diffraction studies of the morphology of the growing Si(001 )/SiO2 interface are presented. We show the evolution of the root mean square roughness as a function of the growth variables, and we try to go beyond the root mean square
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2353008eadee9528f8b819fb84a37820
https://doi.org/10.1557/proc-399-531
https://doi.org/10.1557/proc-399-531
Autor:
K. W. Evans-Lutterodt, Mau-Tsu Tang
Publikováno v:
MRS Proceedings. 355
Root mean square measurements of the Si(001)/SiO 2 interface have been performed with a variety of techniques. Using X-ray diffraction to represent the diffraction class of techniques, and atomic force microscopy to represent imaging techniques, we d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6912fe8f34592b8a9cf31bf3a249946f
https://doi.org/10.1557/proc-355-373
https://doi.org/10.1557/proc-355-373