Zobrazeno 1 - 10
of 38
pro vyhledávání: '"K. Vanlalawmpuia"'
Autor:
K. Vanlalawmpuia, Aditya Sankar Medury
Publikováno v:
IEEE Transactions on Electron Devices. 70:1417-1424
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3bbc9f1b02a5272c309ccea15759a9f
https://doi.org/10.1109/ted.2023.3237507
https://doi.org/10.1109/ted.2023.3237507
Autor:
Brinda Bhowmick, K. Vanlalawmpuia
Publikováno v:
IEEE Sensors Journal. 22:939-947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f533c668a5de4e4d5d34d5bc25465e
https://doi.org/10.1109/jsen.2021.3128473
https://doi.org/10.1109/jsen.2021.3128473
Autor:
Brinda Bhowmick, K. Vanlalawmpuia
Publikováno v:
Silicon. 14:7517-7529
In this article, using a 3D Technology computer aided design (TCAD) simulator, a systematic investigation on the effects of temperature variations in the range of 200–400 K on various parameters of a delta doped heterojunction vertical tunnel FET (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935f7df1a2af09c240eb7062a8ebe25b
https://doi.org/10.1007/s12633-021-01504-7
https://doi.org/10.1007/s12633-021-01504-7
Akademický článek
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Autor:
K. Vanlalawmpuia, Brinda Bhowmick
Publikováno v:
Journal of Computational Electronics. 20:1137-1146
Workfunction variation (WFV) in a high-k/titanium metal gate stack vertical tunnel field-effect transistor (FET) with a delta-doped layer in the germanium source is explored using technology computer-aided design simulations. The field-induced quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce26ecfd53f84562cb1c908f64b5c1ea
https://doi.org/10.1007/s10825-021-01686-8
https://doi.org/10.1007/s10825-021-01686-8
Autor:
Brinda Bhowmick, K. Vanlalawmpuia
Publikováno v:
Indian Journal of Physics. 95:1697-1708
This paper analyzes the reliability issues of the Heterostacked-TFET (HS-TFET) in detail. The investigation of the device reliability is carried out by examining the effect of interface trap charges (ITCs) and the temperature affectability of the HS-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba228c088c77a17310ffcb8807dc02e0
https://doi.org/10.1007/s12648-020-01834-z
https://doi.org/10.1007/s12648-020-01834-z
Autor:
K. Vanlalawmpuia, Brinda Bhowmick
Publikováno v:
Silicon. 13:155-166
A new hetero-structure vertical tunnel field effect transistor is proposed and investigated using Sentaurus Technology Computer-aided Design simulation. Since the direction of the gate electric field is in alignment with the direction of tunneling of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dff5ac9f7a6002b2de25088e64e7f2c2
https://doi.org/10.1007/s12633-020-00411-7
https://doi.org/10.1007/s12633-020-00411-7
Autor:
K. Vanlalawmpuia, Brinda Bhowmick
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811691232
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad7a1ee56df8d9448333fad612c8201
https://doi.org/10.1007/978-981-16-9124-9_8
https://doi.org/10.1007/978-981-16-9124-9_8
Akademický článek
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Autor:
K. Vanlalawmpuia, Brinda Bhowmick
Publikováno v:
Nanoelectronic Devices for Hardware and Software Security ISBN: 9781003126645
Nanoelectronic Devices for Hardware and Software Security
Nanoelectronic Devices for Hardware and Software Security
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8735cde0e2e155de5c1eb96a832d3f8a
https://doi.org/10.1201/9781003126645-2
https://doi.org/10.1201/9781003126645-2