Zobrazeno 1 - 8
of 8
pro vyhledávání: '"K. V. L. V. Narayanachari"'
Autor:
Jill K. Wenderott, Eric M. Dufresne, Yan Li, Hui Cao, Qingteng Zhang, K. V. L. V. Narayanachari, D. Bruce Buchholz, Supratik Guha, Dillon D. Fong
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 21, Pp n/a-n/a (2023)
Abstract The exchange of ions across interfaces is key to the field of iontronics, where the properties of the device can be altered by the local ion concentration. This study investigates a complex oxide system where structural and electronic phase
Externí odkaz:
https://doaj.org/article/d1215ad3ea034a51a94f4ba5772e5917
Autor:
Assael Cohen, Pranab K. Mohapatra, Simon Hettler, Avinash Patsha, K. V. L. V. Narayanachari, Pini Shekhter, John Cavin, James M. Rondinelli, Michael Bedzyk, Oswaldo Dieguez, Raul Arenal, Ariel Ismach
Publikováno v:
ACS Nano. 17:5399-5411
Conventional epitaxy plays a crucial role in current state-of-the art semiconductor technology, as it provides a path for accurate control at the atomic scale of thin films and nanostructures, to be used as the building blocks in nanoelectronics, opt
Autor:
Michael J. Bedzyk, K. V. L. V. Narayanachari, J. K. Wenderott, D. Bruce Buchholz, Elise A. Goldfine, Sossina M. Haile
Publikováno v:
ACS Applied Electronic Materials. 2:3571-3576
The photocatalyst β-TaON is of interest due to promising properties, such as stability, suitable band gap for visible light, and carrier mobility. We implemented a combinatorial, material discovery...
Autor:
Ruifeng Zhang, Dipendra Jha, Wei-keng Liao, K. V. L. V. Narayanachari, Denis T. Keane, Alok Choudhary, Yip-Wah Chung, Michael J. Bedzyk, Ankit Agrawal
Publikováno v:
ICPRAM
Publikováno v:
RSC Advances. 7:17832-17840
Yttria stabilized zirconia (YSZ) films are being used both as functional oxide and buffer layers for integration of various other functional oxide films on Si substrates. As functional properties of these oxides are highly anisotropic in nature, high
Autor:
Kbr Varma, K. V. L. V. Narayanachari, Navakanta Bhat, Rajeev Ranjan, Srinivasan Raghavan, Amiya Banerjee, Hareesh Chandrasekar
Publikováno v:
IndraStra Global.
Stress is inevitable during thin film growth. It is demonstrated here that the growth stress has a significant effect on the dielectric constant of high-k thin films. ZrO2 thin films were deposited on Ge by reactive direct current sputtering. Stress
Autor:
Kayla A. Cooley, Amy Duwel, Chenghao Wan, K. V. L. V. Narayanachari, Haiyan Wang, Doug White, Suzanne E. Mohney, Yifei Sun, Mikhail A. Kats, Xing Sun, Shriram Ramanathan
Publikováno v:
Journal of Applied Physics. 123:114103
We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclu
Publikováno v:
Journal of Applied Physics. 112:074910
Understanding and controlling growth stress is a requisite for integrating oxides with Si. Yttria stabilized zirconia (YSZ) is both an important functional oxide and a buffer layer material needed for integrating other functional oxides. Stress evolu