Zobrazeno 1 - 2
of 2
pro vyhledávání: '"K. V. Hawkins"'
Autor:
Michael V. Aquilino, Brian W. Messenger, Paul D. Agnello, Oh Jung Kwon, Bhupesh Chandra, T. Tzou, T. Kirahata, Shreesh Narasimha, Daniel J. Poindexter, S.S. Iyer, Erik A. Nelson, William Y. Chang, Geng Wang, K. V. Hawkins, Jaeger Daniel, Gregory G. Freeman, S. Rombawa, Chengwen Pei, Rajendran Krishnasamy, W. Davies, Karen A. Nummy, James P. Norum, Paul C. Parries, Norman Robson, Jinping Liu, X. Wang, Rajeev Malik, Christopher D. Sheraw, X. Chen, Jeffrey B. Johnson, Xin Li, W. Kong, Ming Yin, N. Arnold, Edward P. Maciejewski, Katsunori Onishi
Publikováno v:
2014 IEEE International Electron Devices Meeting.
This paper presents the industry's smallest Embedded Dynamic Random Access Memory (eDRAM) implemented in IBM's 22nm SOI technology. The bit cell area of 0.026µm2 achieves ∼60% scaling over the previous generation with deep trench (DT) capacitance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ec91f5b274f3f393e4cdb66ce3356c
https://doi.org/10.1109/iedm.2014.7047083
https://doi.org/10.1109/iedm.2014.7047083
Autor:
Herbert L. Ho, Jinping Liu, Paul C. Parries, Norman Robson, Jing Li, Puneet Goyal, S.S. Iyer, Ming Yin, Babar A. Khan, Zhengwen Li, Paul D. Agnello, K. V. Hawkins, Sunfei Fang, T. Weaver, Scott R. Stiffler, Kevin McStay, Rishikesh Krishnan, W. Davies, R. Takalkar, T. Kirihata, Sami Rosenblatt, S. Galis, A. Blauberg, Shreesh Narasimha, Michael P. Chudzik, Amanda L. Tessier, William K. Henson, W. Kong, Edward P. Maciejewski, Alberto Cestero, Nauman Zafar Butt, Joseph Ervin, S. Gupta, Jeyaraj Antony Johnson, S. Rombawa, Sungjae Lee, J. Barth, Ying Zhang
Publikováno v:
2010 International Electron Devices Meeting.
We present industry's smallest eDRAM cell and the densest embedded memory integrated into the highest performance 32nm High-K Metal Gate (HKMG) SOI based logic technology. The cell is aggressively scaled at 58% (vs. 45nm) and features the key innovat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324242387bfae4ae688888a5d8ad886a
https://doi.org/10.1109/iedm.2010.5703434
https://doi.org/10.1109/iedm.2010.5703434